Abstract
Electron energy loss spectra (EELS) of cubic and hexagonal BN, AlN, GaN, and InN have been calculated by using the first principles full potential linearized augmented plane wave method. Accurate calculations of linear optical functions are performed in a photon energy range up to 60 eV. The electron excitation energies related to the bulk plasmons are obtained for both reflection and transmission geometries. The predicted EELS data are discussed in comparison with available experimental results.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:41 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 2:02 p.m.) |
Indexed | 1 year, 7 months ago (Feb. 3, 2024, 2:40 p.m.) |
Issued | 24 years, 10 months ago (Nov. 6, 2000) |
Published | 24 years, 10 months ago (Nov. 6, 2000) |
Published Print | 24 years, 10 months ago (Nov. 6, 2000) |
@article{Gavrilenko_2000, title={Energy loss spectra of group III nitrides}, volume={77}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1323992}, DOI={10.1063/1.1323992}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Gavrilenko, V. I. and Wu, R. Q.}, year={2000}, month=nov, pages={3042–3044} }