DOI: 10.1063/1.1323537. Magnetotransport properties of bismuth films on p-GaAs

Magnetotransport properties of bismuth films on p-GaAs

10.1063/1.1323537

Crossref journal-article

AIP Publishing

Journal of Applied Physics (317)

Abstract

Polycrystalline Bi films were deposited onto p-GaAs(100) by electrochemical deposition. Annealing resulted in the formation of large grains with a preferred [012] orientation. The p-GaAs/Bi junctions were rectifying and the barrier height and ideality factor decreased with increasing film thickness. For films greater than 0.5 μm in thickness, the barrier height was about 0.56 eV and the ideality factor was between 1.1–1.2 for both as-deposited and annealed films. The resistance of the as-deposited films exhibited a negative temperature coefficient whereas the annealed films exhibited a positive temperature coefficient due to the limiting carrier mean free path. The magnetoresistance (MR) exhibited a quasilinear field dependence with an MR effect as large as 5600 (560 000%) at 5 K and 2.2 (220%) at room temperature.

Bibliography

Vereecken, P. M., Sun, L., Searson, P. C., Tanase, M., Reich, D. H., & Chien, C. L. (2000). Magnetotransport properties of bismuth films on p-GaAs. Journal of Applied Physics, 88(11), 6529â6535.

Authors 6

P. M. Vereecken (first)
L. Sun (additional)
P. C. Searson (additional)
M. Tanase (additional)
D. H. Reich (additional)
C. L. Chien (additional)

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:42 a.m.)
Deposited	1 year, 6 months ago (Feb. 10, 2024, 11:56 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 12:10 p.m.)
Issued	24 years, 9 months ago (Dec. 1, 2000)
Published	24 years, 9 months ago (Dec. 1, 2000)
Published Print	24 years, 9 months ago (Dec. 1, 2000)

Funders 0

None

BibTeX

@article{Vereecken_2000, title={Magnetotransport properties of bismuth films on p-GaAs}, volume={88}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1323537}, DOI={10.1063/1.1323537}, number={11}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Vereecken, P. M. and Sun, L. and Searson, P. C. and Tanase, M. and Reich, D. H. and Chien, C. L.}, year={2000}, month=dec, pages={6529–6535} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        10
      ]
    ],
    "date-time": "2024-02-10T17:10:15Z",
    "timestamp": 1707585015851
  },
  "reference-count": 28,
  "publisher": "AIP Publishing",
  "issue": "11",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        2000,
        12,
        1
      ]
    ]
  },
  "abstract": "<jats:p>Polycrystalline Bi films were deposited onto p-GaAs(100) by electrochemical deposition. Annealing resulted in the formation of large grains with a preferred [012] orientation. The p-GaAs/Bi junctions were rectifying and the barrier height and ideality factor decreased with increasing film thickness. For films greater than 0.5 \u03bcm in thickness, the barrier height was about 0.56 eV and the ideality factor was between 1.1\u20131.2 for both as-deposited and annealed films. The resistance of the as-deposited films exhibited a negative temperature coefficient whereas the annealed films exhibited a positive temperature coefficient due to the limiting carrier mean free path. The magnetoresistance (MR) exhibited a quasilinear field dependence with an MR effect as large as 5600 (560\u200a000%) at 5 K and 2.2 (220%) at room temperature.</jats:p>",
  "DOI": "10.1063/1.1323537",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T12:42:02Z",
    "timestamp": 1027687322000
  },
  "page": "6529-6535",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 40,
  "title": "Magnetotransport properties of bismuth films on p-GaAs",
  "prefix": "10.1063",
  "volume": "88",
  "author": [
    {
      "given": "P. M.",
      "family": "Vereecken",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland\u200921218"
        }
      ]
    },
    {
      "given": "L.",
      "family": "Sun",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland\u200921218"
        }
      ]
    },
    {
      "given": "P. C.",
      "family": "Searson",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, Maryland\u200921218"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Tanase",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland\u200921218"
        }
      ]
    },
    {
      "given": "D. H.",
      "family": "Reich",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland\u200921218"
        }
      ]
    },
    {
      "given": "C. L.",
      "family": "Chien",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Department of Physics and Astronomy, The Johns Hopkins University, Baltimore, Maryland\u200921218"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024021015594720400_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1335",
      "DOI": "10.1126/science.284.5418.1335",
      "volume": "284",
      "year": "1999",
      "journal-title": "Science"
    },
    {
      "key": "2024021015594720400_r2",
      "doi-asserted-by": "crossref",
      "first-page": "3328",
      "DOI": "10.1103/PhysRevLett.82.3328",
      "volume": "82",
      "year": "1999",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024021015594720400_r3",
      "doi-asserted-by": "crossref",
      "first-page": "R14681",
      "DOI": "10.1103/PhysRevB.58.R14681",
      "volume": "58",
      "year": "1998",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024021015594720400_r4",
      "doi-asserted-by": "crossref",
      "first-page": "6184",
      "DOI": "10.1063/1.370215",
      "volume": "85",
      "year": "1999",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024021015594720400_r5",
      "doi-asserted-by": "crossref",
      "first-page": "1282",
      "DOI": "10.1063/1.115953",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024021015594720400_r6",
      "doi-asserted-by": "crossref",
      "first-page": "440",
      "DOI": "10.1103/PhysRevLett.1.440",
      "volume": "1",
      "year": "1958",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024021015594720400_r7",
      "first-page": "1",
      "volume": "7",
      "year": "1963",
      "journal-title": "Prog. Semicond."
    },
    {
      "key": "2024021015594720400_r8",
      "doi-asserted-by": "crossref",
      "first-page": "2029",
      "DOI": "10.1103/PhysRevB.5.2029",
      "volume": "5",
      "year": "1972",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024021015594720400_r9",
      "doi-asserted-by": "crossref",
      "first-page": "4381",
      "DOI": "10.1103/PhysRevB.14.4381",
      "volume": "14",
      "year": "1976",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024021015594720400_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1060",
      "DOI": "10.1103/PhysRev.91.1060",
      "volume": "91",
      "year": "1953",
      "journal-title": "Phys. Rev."
    },
    {
      "key": "2024021015594720400_r11",
      "doi-asserted-by": "crossref",
      "first-page": "2472",
      "DOI": "10.1103/PhysRevLett.61.2472",
      "volume": "61",
      "year": "1988",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024021015594720400_r12",
      "doi-asserted-by": "crossref",
      "first-page": "2152",
      "DOI": "10.1103/PhysRevLett.66.2152",
      "volume": "66",
      "year": "1991",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024021015594720400_r13",
      "doi-asserted-by": "crossref",
      "first-page": "3745",
      "DOI": "10.1103/PhysRevLett.68.3745",
      "volume": "68",
      "year": "1992",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024021015594720400_r14",
      "doi-asserted-by": "crossref",
      "first-page": "3749",
      "DOI": "10.1103/PhysRevLett.68.3749",
      "volume": "68",
      "year": "1992",
      "journal-title": "Phys. Rev. Lett."
    },
    {
      "key": "2024021015594720400_r15",
      "doi-asserted-by": "crossref",
      "first-page": "3818",
      "DOI": "10.1103/PhysRevB.38.3818",
      "volume": "38",
      "year": "1988",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024021015594720400_r16",
      "doi-asserted-by": "crossref",
      "first-page": "3135",
      "DOI": "10.1063/1.125255",
      "volume": "75",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024021015594720400_r17",
      "doi-asserted-by": "crossref",
      "first-page": "309",
      "DOI": "10.1016/0169-4332(95)00169-7",
      "volume": "90",
      "year": "1995",
      "journal-title": "Appl. Surf. Sci."
    },
    {
      "key": "2024021015594720400_r18",
      "doi-asserted-by": "crossref",
      "first-page": "711",
      "DOI": "10.1002/j.1538-7305.1958.tb03883.x",
      "volume": "37",
      "year": "1958",
      "journal-title": "Bell Syst. Tech. J."
    },
    {
      "key": "2024021015594720400_r19"
    },
    {
      "key": "2024021015594720400_r20"
    },
    {
      "key": "2024021015594720400_r21",
      "doi-asserted-by": "crossref",
      "first-page": "445",
      "DOI": "10.1116/1.582892",
      "volume": "2",
      "year": "1984",
      "journal-title": "J. Vac. Sci. Technol. B"
    },
    {
      "key": "2024021015594720400_r22",
      "first-page": "130",
      "volume": "33",
      "year": "1930",
      "journal-title": "Proc. R. Acad. Sci. Amsterdam"
    },
    {
      "key": "2024021015594720400_r22a",
      "first-page": "363",
      "volume": "33",
      "year": "1930",
      "journal-title": "Proc. R. Acad. Sci. Amsterdam"
    },
    {
      "key": "2024021015594720400_r22b",
      "first-page": "418",
      "volume": "33",
      "year": "1930",
      "journal-title": "Proc. R. Acad. Sci. Amsterdam"
    },
    {
      "key": "2024021015594720400_r23",
      "doi-asserted-by": "crossref",
      "first-page": "6631",
      "DOI": "10.1103/PhysRevB.61.6631",
      "volume": "61",
      "year": "2000",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024021015594720400_r24",
      "doi-asserted-by": "crossref",
      "first-page": "1118",
      "DOI": "10.1103/PhysRev.135.A1118",
      "volume": "135",
      "year": "1964",
      "journal-title": "Phys. Rev. A"
    },
    {
      "key": "2024021015594720400_r25",
      "doi-asserted-by": "crossref",
      "first-page": "1",
      "DOI": "10.1098/rsta.1955.0007",
      "volume": "248",
      "year": "1955",
      "journal-title": "Philos. Trans. R. Soc. London"
    },
    {
      "key": "2024021015594720400_r26",
      "doi-asserted-by": "crossref",
      "first-page": "3818",
      "DOI": "10.1103/PhysRevB.38.3818",
      "volume": "38",
      "year": "1988",
      "journal-title": "Phys. Rev. B"
    }
  ],
  "container-title": "Journal of Applied Physics",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/88/11/6529/19013202/6529_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/jap/article-pdf/88/11/6529/19013202/6529_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        10
      ]
    ],
    "date-time": "2024-02-10T16:56:58Z",
    "timestamp": 1707584218000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/jap/article/88/11/6529/762249/Magnetotransport-properties-of-bismuth-films-on-p"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        2000,
        12,
        1
      ]
    ]
  },
  "references-count": 28,
  "journal-issue": {
    "issue": "11",
    "published-print": {
      "date-parts": [
        [
          2000,
          12,
          1
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.1323537",
  "relation": {},
  "ISSN": [
    "0021-8979",
    "1089-7550"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        2000,
        12,
        1
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        2000,
        12,
        1
      ]
    ]
  }
}