DOI: 10.1063/1.1311603. Uniaxial locked epitaxy of ZnO on the a face of sapphire

Uniaxial locked epitaxy of ZnO on the a face of sapphire

10.1063/1.1311603

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]‖[112̄0] and 〈112̄0〉‖[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to &gt;0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire.

Bibliography

Fons, P., Iwata, K., Yamada, A., Matsubara, K., Niki, S., Nakahara, K., Tanabe, T., & Takasu, H. (2000). Uniaxial locked epitaxy of ZnO on the a face of sapphire. Applied Physics Letters, 77(12), 1801â1803.

Authors 8

P. Fons (first)
K. Iwata (additional)
A. Yamada (additional)
K. Matsubara (additional)
S. Niki (additional)
K. Nakahara (additional)
T. Tanabe (additional)
H. Takasu (additional)

References 10 Referenced 178

10.1016/S0038-1098(97)10145-4 / Solid State Commun. (1998)
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10.1016/0040-6090(95)06657-8 / Thin Solid Films (1995)
10.1063/1.112634 / Appl. Phys. Lett. (1994)
10.1007/BF02666649 / J. Electron. Mater. (1996)
10.1016/S0022-0248(97)00286-8 / J. Cryst. Growth (1997)
10.1016/S0022-0248(98)01427-4 / J. Cryst. Growth (1999)
10.1063/1.92751 / Appl. Phys. Lett. (1981)
{'key': '2024020318460350800_r9'}
{'key': '2024020318460350800_r10'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:43 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 1:46 p.m.)
Indexed	1 year, 3 months ago (May 7, 2024, 8:39 a.m.)
Issued	24 years, 11 months ago (Sept. 18, 2000)
Published	24 years, 11 months ago (Sept. 18, 2000)
Published Print	24 years, 11 months ago (Sept. 18, 2000)

Funders 0

None

BibTeX

@article{Fons_2000, title={Uniaxial locked epitaxy of ZnO on the a face of sapphire}, volume={77}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1311603}, DOI={10.1063/1.1311603}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fons, P. and Iwata, K. and Yamada, A. and Matsubara, K. and Niki, S. and Nakahara, K. and Tanabe, T. and Takasu, H.}, year={2000}, month=sep, pages={1801–1803} }

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