DOI: 10.1063/1.1310209. Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions

Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions

10.1063/1.1310209

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have used photoemission methods to directly measure the valence and conduction band offsets at SrTiO3/Si(001) interfaces, as prepared by molecular-beam epitaxy. Within experimental error, the measured values are the same for growth on n- and p-Si, with the entire band discontinuity occurring at the valence band edge. In addition, band bending is much larger at the p-Si heterojunction than at the n-type heterojunction. Previously published threshold voltage behavior for these interfaces can now be understood in light of the present results.

Authors 6

S. A. Chambers (first)
Y. Liang (additional)
Z. Yu (additional)
R. Droopad (additional)
J. Ramdani (additional)
K. Eisenbeiser (additional)

References 10 Referenced 197

10.1103/PhysRevLett.81.3014 / Phys. Rev. Lett. (1998)
10.1063/1.126023 / Appl. Phys. Lett. (2000)
10.1063/1.123476 / Appl. Phys. Lett. (1999)
10.1016/S0167-5729(00)00005-4 / Surf. Sci. Rep. (2000)
{'key': '2024020318443741100_r5', 'first-page': '1585', 'volume': '44', 'year': '1999', 'journal-title': 'Bull. Am. Phys. Soc.'} / Bull. Am. Phys. Soc. (1999)
10.1103/PhysRevLett.44.1620 / Phys. Rev. Lett. (1980)
10.1103/PhysRevB.28.1965 / Phys. Rev. B (1983)
10.1116/1.570144 / J. Vac. Sci. Technol. (1979)
10.1063/1.102747 / Appl. Phys. Lett. (1990)
{'key': '2024020318443741100_r10'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 1:44 p.m.)
Indexed	1 month, 3 weeks ago (July 9, 2025, 7:01 p.m.)
Issued	24 years, 11 months ago (Sept. 11, 2000)
Published	24 years, 11 months ago (Sept. 11, 2000)
Published Print	24 years, 11 months ago (Sept. 11, 2000)

Funders 0

None

BibTeX

@article{Chambers_2000, title={Band discontinuities at epitaxial SrTiO3/Si(001) heterojunctions}, volume={77}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1310209}, DOI={10.1063/1.1310209}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chambers, S. A. and Liang, Y. and Yu, Z. and Droopad, R. and Ramdani, J. and Eisenbeiser, K.}, year={2000}, month=sep, pages={1662–1664} }

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