Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

In this letter, we experimentally evaluate the effect of miniaturization and surface roughness on transmission losses within a Si/SiO2 waveguide system, and explain the results using a theoretical model. Micrometer/nanometer-sized waveguides are imperative for its potential use in dense integrated optics and optical interconnection for silicon integrated circuits. A theoretical model was employed to predict the relationship between the transmission losses of the dielectric silicon waveguide and its width. This model accurately predicts that loss increases as waveguide width decreases. Furthermore, we show that a major source of loss comes from sidewall roughness. We have constructed a complete contour map showing the interdependence of sidewall roughness and transmission loss, to assist users in their design of an optimal waveguide fabrication process that minimizes loss. Additionally, users can find an effective path to reduce the scattering loss from sidewall roughness. Using this map, we confirm that nanometer-size silicon waveguides with 0.1 dB/cm transmission loss are possible with the currently available technology.

Bibliography

Lee, K. K., Lim, D. R., Luan, H.-C., Agarwal, A., Foresi, J., & Kimerling, L. C. (2000). Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model. Applied Physics Letters, 77(11), 1617–1619.

Authors 6
  1. Kevin K. Lee (first)
  2. Desmond R. Lim (additional)
  3. Hsin-Chiao Luan (additional)
  4. Anuradha Agarwal (additional)
  5. James Foresi (additional)
  6. Lionel C. Kimerling (additional)
References 12 Referenced 352
  1. 10.1063/1.363686 / J. Appl. Phys. (1996)
  2. 10.1063/1.116300 / Appl. Phys. Lett. (1996)
  3. 10.1038/36514 / Nature (London) (1997)
  4. 10.1117/12.273843 / Proc. SPIE (1997)
  5. 10.1117/12.371246 / Proc. SPIE (1999)
  6. {'key': '2024020318460957900_r6', 'first-page': '242', 'volume': '141', 'year': '1994', 'journal-title': 'IEE Proc.-J: Optoelectron.'} / IEE Proc.-J: Optoelectron. (1994)
  7. 10.1007/BF00708339 / Opt. Quantum Electron. (1994)
  8. 10.1002/j.1538-7305.1969.tb01742.x / Bell Syst. Tech. J. (1969)
  9. 10.1049/el:19920839 / Electron. Lett. (1992)
  10. {'key': '2024020318460957900_r10'}
  11. {'key': '2024020318460957900_r11'}
  12. 10.1116/1.589759 / J. Vac. Sci. Technol. B (1997)
Dates
Type When
Created 23 years ago (July 26, 2002, 9:29 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 1:46 p.m.)
Indexed 4 weeks, 1 day ago (July 26, 2025, 5:31 a.m.)
Issued 24 years, 11 months ago (Sept. 11, 2000)
Published 24 years, 11 months ago (Sept. 11, 2000)
Published Print 24 years, 11 months ago (Sept. 11, 2000)
Funders 0

None

@article{Lee_2000, title={Effect of size and roughness on light transmission in a Si/SiO2 waveguide: Experiments and model}, volume={77}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1308532}, DOI={10.1063/1.1308532}, number={11}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Lee, Kevin K. and Lim, Desmond R. and Luan, Hsin-Chiao and Agarwal, Anuradha and Foresi, James and Kimerling, Lionel C.}, year={2000}, month=sep, pages={1617–1619} }