Abstract
Electrical and optical properties of CuAlO2, a p-type conducting transparent oxide, were examined for the thin films prepared by the pulsed laser deposition technique. The indirect and direct allowed optical band gaps were evaluated to be ∼1.8 and ∼3.5 eV, respectively. The conductivity at 300 K was ∼3×10−1 S cm−1 and its temperature dependence is of the thermal-activation type (activation energy ≈0.2 eV) at temperatures >220 K but is of the variable-range hopping type (log σ∝T−1/4) at <220 K. It was inferred that an admixed state of Cu 3d and O 2p primarily constitutes the upper valence band, which controls transport of positive holes, from a combined information on ultraviolet photoemission spectrum with x-ray photoemission spectrum. An energy band calculation by full-potential linearized augmented plane wave method substantiated the experimental findings. The present results gave a solid basis for our working hypothesis [Nature (London) 389, 939 (1997)] for chemical design of p-type conducting transparent oxides.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:40 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 5, 2024, 2:19 p.m.) |
Indexed | 3 weeks, 1 day ago (Aug. 6, 2025, 9:27 a.m.) |
Issued | 24 years, 10 months ago (Oct. 1, 2000) |
Published | 24 years, 10 months ago (Oct. 1, 2000) |
Published Print | 24 years, 10 months ago (Oct. 1, 2000) |
@article{Yanagi_2000, title={Electronic structure and optoelectronic properties of transparent p-type conducting CuAlO2}, volume={88}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1308103}, DOI={10.1063/1.1308103}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yanagi, Hiroshi and Inoue, Shin-ichiro and Ueda, Kazushige and Kawazoe, Hiroshi and Hosono, Hideo and Hamada, Noriaki}, year={2000}, month=oct, pages={4159–4163} }