Abstract
Ab initio approaches have been used to study microscopic mechanisms of the dielectric degradation of SiO2 induced by electronic excitation. In this article, we focus on the possibility of H dissociation from H-terminated O vacancies in SiO2 induced by Si–H σ→σ* excitation. To take the finite lifetime of this excitation into account, real-time electron dynamics were treated by solving the time-dependent Schrödinger equation coupled with Newton’s equations for ions. We found that the decay-time constant of the Si–H σ→σ* excitation is on the order of 10 fs, which is too short to cause direct H dissociation. Therefore, not only the electronic excitation, but also thermal assistance and/or transport of the excited electron from SiO2 to the Si substrate appears responsible for the Si–H bond breaking and subsequent SiO2 degradation.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:40 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 6, 2024, 8:08 a.m.) |
Indexed | 1 month ago (Aug. 2, 2025, 1:25 a.m.) |
Issued | 24 years, 10 months ago (Oct. 15, 2000) |
Published | 24 years, 10 months ago (Oct. 15, 2000) |
Published Print | 24 years, 10 months ago (Oct. 15, 2000) |
@article{Yokozawa_2000, title={Hydrogen dynamics in SiO2 triggered by electronic excitations}, volume={88}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1289815}, DOI={10.1063/1.1289815}, number={8}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Yokozawa, Ayumi and Miyamoto, Yoshiyuki}, year={2000}, month=oct, pages={4542–4546} }