DOI: 10.1063/1.1289656. Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers

Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers

10.1063/1.1289656

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Ultrathin (001) Si films bonded onto (001) Si wafers, inducing grain boundaries with twist angles varying from 0.5° to 12°, were studied by transmission electron microscopy. A great structural difference between low (ψ&lt;5°) and high (ψ&gt;6°) twist angles was observed. In low twist angle grain boundaries, “twist interfacial dislocations” are dissociated and produce rough interfaces with no oxide precipitates. It is the opposite in high-angle grain boundaries: there is no dissociation, the interfaces are smoother but contain oxide precipitates. These differences are not attributed to the thin thickness of one grain, but to the large atomic differences between high- and low-angle twist grain boundaries, which is not the case for tilt grain boundaries.

Bibliography

Rouviere, J. L., Rousseau, K., Fournel, F., & Moriceau, H. (2000). Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers. Applied Physics Letters, 77(8), 1135â1137.

Authors 4

J. L. Rouviere (first)
K. Rousseau (additional)
F. Fournel (additional)
H. Moriceau (additional)

References 15 Referenced 32

10.1063/1.366353 / J. Appl. Phys. (1997)
10.1049/el:19950805 / Electron. Lett. (1995)
10.1007/s003390050530 / Appl. Phys. A: Solids Surf. (1997)
10.1063/1.123824 / Appl. Phys. Lett. (1999)
10.1016/S0039-6028(99)00501-4 / Surf. Sci. (1999)
10.1016/S0921-5107(99)00431-6 / Mater. Sci. Eng., B (2000)
10.1063/1.125371 / Appl. Phys. Lett. (1999)
10.1080/01418617908234861 / Philos. Mag. A (1979)
10.1007/BF00323957 / Appl. Phys. A: Solids Surf. (1990)
10.1016/S0921-5107(96)01699-6 / Mater. Sci. Eng., B (1996)
{'key': '2024020318381695900_r10', 'first-page': '439', 'volume': '164', 'year': '1999', 'journal-title': 'Inst. Phys. Conf. Ser.'} / Inst. Phys. Conf. Ser. (1999)
10.1080/095008399176896 / Philos. Mag. Lett. (1999)
10.1080/01418617908239282 / Philos. Mag. Lett. (1979)
{'key': '2024020318381695900_r13'}
{'key': '2024020318381695900_r14'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 1:38 p.m.)
Indexed	3 months, 1 week ago (May 27, 2025, 10:58 a.m.)
Issued	25 years ago (Aug. 21, 2000)
Published	25 years ago (Aug. 21, 2000)
Published Print	25 years ago (Aug. 21, 2000)

Funders 0

None

BibTeX

@article{Rouviere_2000, title={Huge differences between low- and high-angle twist grain boundaries: The case of ultrathin (001) Si films bonded to (001) Si wafers}, volume={77}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.1289656}, DOI={10.1063/1.1289656}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Rouviere, J. L. and Rousseau, K. and Fournel, F. and Moriceau, H.}, year={2000}, month=aug, pages={1135–1137} }

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