Crossref journal-article
AIP Publishing
Journal of Applied Physics (317)
Abstract

The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered.

Bibliography

Myers, S. M., Seibt, M., & Schröter, W. (2000). Mechanisms of transition-metal gettering in silicon. Journal of Applied Physics, 88(7), 3795–3819.

Authors 3
  1. S. M. Myers (first)
  2. M. Seibt (additional)
  3. W. Schröter (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:40 a.m.)
Deposited 1 year, 6 months ago (Feb. 5, 2024, 2:24 p.m.)
Indexed 1 month, 1 week ago (July 19, 2025, 11:44 p.m.)
Issued 24 years, 10 months ago (Oct. 1, 2000)
Published 24 years, 10 months ago (Oct. 1, 2000)
Published Print 24 years, 10 months ago (Oct. 1, 2000)
Funders 0

None

@article{Myers_2000, title={Mechanisms of transition-metal gettering in silicon}, volume={88}, ISSN={1089-7550}, url={http://dx.doi.org/10.1063/1.1289273}, DOI={10.1063/1.1289273}, number={7}, journal={Journal of Applied Physics}, publisher={AIP Publishing}, author={Myers, S. M. and Seibt, M. and Schröter, W.}, year={2000}, month=oct, pages={3795–3819} }