Abstract
External electro-optic probes fabricated from two different crystal orientations of GaAs have been implemented in an electro-optic sampling system that is capable of mapping three independent orthogonal components of free-space electric fields. The results obtained for the radiated field from a microstrip patch antenna by the GaAs probes are compared with results on the same antenna obtained using bismuth silicate and lithium tantalate probes. An 8 μm spatial resolution has also been demonstrated for the electro-optic field-mapping system, and the capability for the system to measure field patterns at frequencies up to 100 GHz has been shown.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 7 months ago (Feb. 3, 2024, 1:29 p.m.) |
Indexed | 4 months, 3 weeks ago (April 13, 2025, 12:53 a.m.) |
Issued | 25 years, 1 month ago (July 24, 2000) |
Published | 25 years, 1 month ago (July 24, 2000) |
Published Print | 25 years, 1 month ago (July 24, 2000) |
@article{Yang_2000, title={Electro-optic field mapping system utilizing external gallium arsenide probes}, volume={77}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.127019}, DOI={10.1063/1.127019}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Yang, K. and Katehi, L. P. B. and Whitaker, J. F.}, year={2000}, month=jul, pages={486–488} }