Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

An annealing method for preparing SrBi2Ta2O9 (SBT) thin films, a face-to-face annealing method, is proposed, and its effectiveness is demonstrated. In this method, an SBT film deposited on a substrate using a sol-gel technique was directly put with the film side down on the other SBT film during crystallization process. The SBT films were crystallized at 750 °C in an oxygen flow and successively annealed at 400 °C in a 6.2 wt % ozone flow. It was found that remanent polarization value (2Pr) in a 175-nm-thick SBT film was as large as 23 μC/cm2 when the face-to-face annealing method was conducted. It was also found from time-dependent leakage current measurement that the leakage current density of the films was lower than 1×10−9 A/cm2 at an electric field of 65 kV/cm.

Bibliography

Aizawa, K., Tokumitsu, E., Okamoto, K., & Ishiwara, H. (2000). Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films. Applied Physics Letters, 76(18), 2609–2611.

Authors 4
  1. Koji Aizawa (first)
  2. Eisuke Tokumitsu (additional)
  3. Kojiro Okamoto (additional)
  4. Hiroshi Ishiwara (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:29 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 12:59 p.m.)
Indexed 1 month, 4 weeks ago (June 24, 2025, 6:25 a.m.)
Issued 25 years, 3 months ago (May 1, 2000)
Published 25 years, 3 months ago (May 1, 2000)
Published Print 25 years, 3 months ago (May 1, 2000)
Funders 0

None

@article{Aizawa_2000, title={Impact of face-to-face annealing in preparation of sol-gel-derived SrBi2Ta2O9 thin films}, volume={76}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.126424}, DOI={10.1063/1.126424}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Aizawa, Koji and Tokumitsu, Eisuke and Okamoto, Kojiro and Ishiwara, Hiroshi}, year={2000}, month=may, pages={2609–2611} }