DOI: 10.1063/1.126309. Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

10.1063/1.126309

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The thermal decomposition pathway of an ultrathin oxide layer on Ge(100) and Si(100) surfaces is examined by synchrotron radiation photoelectron spectroscopy and ultraviolet photoelectron spectroscopy with helium I radiation. The as-prepared oxide layer consists of a mixture of oxides, namely, suboxides and dioxides, on both the surfaces. Upon annealing, the oxide layers decompose and desorb as monoxides. However, we find that the decomposition pathways are different from each other. On annealing Ge oxides, GeO2 species transform to GeO and remain on the surface and desorb at &gt;420 °C. In contrast, annealing of Si oxides results in the transformation of SiO to SiO2 up to temperatures (∼780 °C) close to the desorption. At higher temperatures, SiO2 decomposes and desorbs, implying a reverse transformation to volatile SiO species.

Bibliography

Prabhakaran, K., Maeda, F., Watanabe, Y., & Ogino, T. (2000). Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces. Applied Physics Letters, 76(16), 2244â2246.

Authors 4

K. Prabhakaran (first)
F. Maeda (additional)
Y. Watanabe (additional)
T. Ogino (additional)

References 20 Referenced 232

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 12:56 p.m.)
Indexed	2 months, 2 weeks ago (June 17, 2025, 2:06 a.m.)
Issued	25 years, 4 months ago (April 17, 2000)
Published	25 years, 4 months ago (April 17, 2000)
Published Print	25 years, 4 months ago (April 17, 2000)

Funders 0

None

BibTeX

@article{Prabhakaran_2000, title={Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces}, volume={76}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.126309}, DOI={10.1063/1.126309}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Prabhakaran, K. and Maeda, F. and Watanabe, Y. and Ogino, T.}, year={2000}, month=apr, pages={2244–2246} }

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