DOI: 10.1063/1.126238. Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties

Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties

10.1063/1.126238

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Ordered semiconductor ZnO nanowire arrays embedded in anodic alumina membranes (AAM) were fabricated by generating alumina templates with nanochannels, electrodepositing Zn in them, and then oxidizing the Zn nanowire arrays. The polycrystalline ZnO nanowires with the diameters ranging from 15 to 90 nm were uniformly assembled into the hexagonally ordered nanochannels of the AAM. Photoluminescence (PL) measurements show a blue PL band in the wavelength range of 450–650 nm caused by the singly ionized oxygen vacancy in ZnO nanowires.

Bibliography

Li, Y., Meng, G. W., Zhang, L. D., & Phillipp, F. (2000). Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties. Applied Physics Letters, 76(15), 2011â2013.

Authors 4

Y. Li (first)
G. W. Meng (additional)
L. D. Zhang (additional)
F. Phillipp (additional)

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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:54 p.m.)
Indexed	2 weeks, 6 days ago (Aug. 3, 2025, 12:23 a.m.)
Issued	25 years, 4 months ago (April 10, 2000)
Published	25 years, 4 months ago (April 10, 2000)
Published Print	25 years, 4 months ago (April 10, 2000)

Funders 0

None

BibTeX

@article{Li_2000, title={Ordered semiconductor ZnO nanowire arrays and their photoluminescence properties}, volume={76}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.126238}, DOI={10.1063/1.126238}, number={15}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Li, Y. and Meng, G. W. and Zhang, L. D. and Phillipp, F.}, year={2000}, month=apr, pages={2011–2013} }

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