DOI: 10.1063/1.126199. Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

10.1063/1.126199

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The Al/CeO2/Si metal–insulator–semiconductor (MIS) structure showed a capacitance–voltage (C–V) hysteresis, which could be controlled by variation of the CeO2 thickness. For a sample with 3000 Å CeO2, hysteresis width as high as ∼1.8 V was obtained. For nonvolatile field-effect transistors, the Al/CeO2/Si MIS structure with a reliable and controllable C–V hysteresis could be an alternative to metal–ferroelectric–semiconductor structures containing unstable, multicomponent ferroelectric materials.

Bibliography

Kim, L., Kim, J., Jung, D., & Roh, Y. (2000). Controllable capacitanceâvoltage hysteresis width in the aluminumâcerium-dioxideâsilicon metalâinsulatorâsemiconductor structure: Application to nonvolatile memory devices without ferroelectrics. Applied Physics Letters, 76(14), 1881â1883.

Authors 4

L. Kim (first)
J. Kim (additional)
D. Jung (additional)
Y. Roh (additional)

References 7 Referenced 31

10.1063/1.118190 / Appl. Phys. Lett. (1997)
10.1143/JJAP.35.4987 / Jpn. J. Appl. Phys., Part 1 (1996)
10.1143/JJAP.35.L1680 / Jpn. J. Appl. Phys., Part 2 (1996)
10.1143/JJAP.35.4175 / Jpn. J. Appl. Phys., Part 1 (1996)
10.1016/0038-1101(96)00038-X / Solid-State Electron. (1996)
10.1063/1.112467 / Appl. Phys. Lett. (1994)
10.1143/JJAP.36.L1681 / Jpn. J. Appl. Phys., Part 2 (1997)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:53 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 6:47 p.m.)
Issued	25 years, 4 months ago (April 3, 2000)
Published	25 years, 4 months ago (April 3, 2000)
Published Print	25 years, 4 months ago (April 3, 2000)

Funders 0

None

BibTeX

@article{Kim_2000, title={Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics}, volume={76}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.126199}, DOI={10.1063/1.126199}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kim, L. and Kim, J. and Jung, D. and Roh, Y.}, year={2000}, month=apr, pages={1881–1883} }

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