DOI: 10.1063/1.125712. Nonvolatile programmable two-terminal diodes using a ferroelectric semiconductor

Nonvolatile programmable two-terminal diodes using a ferroelectric semiconductor

10.1063/1.125712

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The conductance of diodes formed by epitaxial (Pb, La)(Zr, Ti)O3 on SrTiO3 doped with Nb is programed using the relaxation semiconductor characteristics of a ferroelectric. Namely, a three-terminal device function is given to a two-terminal device by time-domain control. The conductance modulation programed by a short-voltage pulse is perfectly retained for ten days at room temperature and is nondestructively read. The relaxation current at very low bias is also programmable. When the current is regulated by a metal/ferroelectric contact, the pulse modulation is obscure and is not retained. This implies that the surface layer at the metal/ferroelectric contact is negligibly thin or thinner than the tunneling distance.

Bibliography

Okano, M., & Watanabe, Y. (2000). Nonvolatile programmable two-terminal diodes using a ferroelectric semiconductor. Applied Physics Letters, 76(2), 233â235.

Authors 2

Motochika Okano (first)
Yukio Watanabe (additional)

References 19 Referenced 19

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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:29 p.m.)
Indexed	1 year, 6 months ago (Feb. 3, 2024, 8 p.m.)
Issued	25 years, 7 months ago (Jan. 10, 2000)
Published	25 years, 7 months ago (Jan. 10, 2000)
Published Print	25 years, 7 months ago (Jan. 10, 2000)

Funders 0

None

BibTeX

@article{Okano_2000, title={Nonvolatile programmable two-terminal diodes using a ferroelectric semiconductor}, volume={76}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125712}, DOI={10.1063/1.125712}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Okano, Motochika and Watanabe, Yukio}, year={2000}, month=jan, pages={233–235} }

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