DOI: 10.1063/1.125698. Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

Time-resolved photoluminescence studies of InxGa1−xAs1−yNy

10.1063/1.125698

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Time-resolved photoluminescence spectroscopy has been used to investigate carrier decay dynamics in a InxGa1−xAs1−yNy (x∼0.03, y∼0.01) epilayer grown on GaAs by metal organic chemical vapor deposition. Time-resolved photoluminescence (PL) measurements, performed for various excitation intensities and sample temperatures, indicate that the broad PL emission at low temperature is dominated by localized exciton recombination. Lifetimes in the range of 0.07–0.34 ns are measured; these photoluminescence lifetimes are significantly shorter than corresponding values obtained for GaAs. In particular, we observe an emission energy dependence of the decay lifetime at 10 K, whereby the lifetime decreases with increasing emission energy across the PL spectrum. This behavior is characteristic of a distribution of localized states, which arises from alloy fluctuations.

Bibliography

Mair, R. A., Lin, J. Y., Jiang, H. X., Jones, E. D., Allerman, A. A., & Kurtz, S. R. (2000). Time-resolved photoluminescence studies of InxGa1âxAs1âyNy. Applied Physics Letters, 76(2), 188â190.

Authors 6

R. A. Mair (first)
J. Y. Lin (additional)
H. X. Jiang (additional)
E. D. Jones (additional)
A. A. Allerman (additional)
S. R. Kurtz (additional)

References 20 Referenced 137

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:29 p.m.)
Indexed	2 months, 3 weeks ago (June 9, 2025, 7:25 a.m.)
Issued	25 years, 7 months ago (Jan. 10, 2000)
Published	25 years, 7 months ago (Jan. 10, 2000)
Published Print	25 years, 7 months ago (Jan. 10, 2000)

Funders 0

None

BibTeX

@article{Mair_2000, title={Time-resolved photoluminescence studies of InxGa1‚àíxAs1‚àíyNy}, volume={76}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125698}, DOI={10.1063/1.125698}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Mair, R. A. and Lin, J. Y. and Jiang, H. X. and Jones, E. D. and Allerman, A. A. and Kurtz, S. R.}, year={2000}, month=jan, pages={188‚Äì190} }

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