Abstract
The amplitudes of stress-induced leakage currents (SILC) generated for a constant injected dose are measured for oxide thicknesses between 3.5 and 9 nm. Then, the doses necessary to generate the same amplitude of SILC for all oxide thicknesses at 6 MV/cm are measured. The analysis of these results, considering that the SILC is due to a trap-assisted tunneling mechanism, demonstrates that a uniform trap distribution throughout the oxide cannot explain the thickness dependence of the SILC, indicating that the trap distribution is an important feature in the understanding of the oxide thickness dependence of the SILC.
References
8
Referenced
14
{'key': '2024020317222156300_r1'}
10.1109/16.557724
/ IEEE Trans. Electron Devices (1997){'key': '2024020317222156300_r3', 'first-page': '323', 'volume-title': 'Tech. Dig. Int. Electron Devices Meet.', 'year': '1996'}
/ Tech. Dig. Int. Electron Devices Meet. (1996)10.1109/16.701488
/ IEEE Trans. Electron Devices (1998){'key': '2024020317222156300_r5'}
10.1063/1.111789
/ Appl. Phys. Lett. (1994)10.1063/1.119186
/ Appl. Phys. Lett. (1997)10.1016/S0026-2714(99)00104-3
/ Microelectron. Reliab. (1999)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:22 p.m.) |
Indexed | 4 months, 4 weeks ago (April 2, 2025, 6:23 a.m.) |
Issued | 25 years, 8 months ago (Dec. 13, 1999) |
Published | 25 years, 8 months ago (Dec. 13, 1999) |
Published Print | 25 years, 8 months ago (Dec. 13, 1999) |
@article{Riess_1999, title={Analysis of the stress-induced leakage current and related trap distribution}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125484}, DOI={10.1063/1.125484}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Riess, P. and Ghibaudo, G. and Pananakakis, G.}, year={1999}, month=dec, pages={3871–3873} }