Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The amplitudes of stress-induced leakage currents (SILC) generated for a constant injected dose are measured for oxide thicknesses between 3.5 and 9 nm. Then, the doses necessary to generate the same amplitude of SILC for all oxide thicknesses at 6 MV/cm are measured. The analysis of these results, considering that the SILC is due to a trap-assisted tunneling mechanism, demonstrates that a uniform trap distribution throughout the oxide cannot explain the thickness dependence of the SILC, indicating that the trap distribution is an important feature in the understanding of the oxide thickness dependence of the SILC.

Bibliography

Riess, P., Ghibaudo, G., & Pananakakis, G. (1999). Analysis of the stress-induced leakage current and related trap distribution. Applied Physics Letters, 75(24), 3871–3873.

Authors 3
  1. P. Riess (first)
  2. G. Ghibaudo (additional)
  3. G. Pananakakis (additional)
References 8 Referenced 14
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 12:22 p.m.)
Indexed 4 months, 4 weeks ago (April 2, 2025, 6:23 a.m.)
Issued 25 years, 8 months ago (Dec. 13, 1999)
Published 25 years, 8 months ago (Dec. 13, 1999)
Published Print 25 years, 8 months ago (Dec. 13, 1999)
Funders 0

None

@article{Riess_1999, title={Analysis of the stress-induced leakage current and related trap distribution}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125484}, DOI={10.1063/1.125484}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Riess, P. and Ghibaudo, G. and Pananakakis, G.}, year={1999}, month=dec, pages={3871–3873} }