Abstract
Epitaxial zinc oxide films have been prepared on gallium nitride (0002) substrates by cathodic electrodeposition in an aqueous solution containing a zinc salt and dissolved oxygen at 85 °C. The films have the hexagonal structure with the c axis parallel to that of GaN and the [100] direction in ZnO parallel to the [100] direction in GaN in the (0002) basal plane. The structural quality is attested by the values of the full width at half maximum in θ/2θ x-ray diffraction (XRD) diagrams [0.07° for the (0002) peak] and in five circles XRD diagrams [0.74° for the ZnO (101̄1) planes compared to 0.47° for the GaN (101̄1) planes]. The morphology of the layers has been studied by scanning electron microscopy. Before coalescence, arrays of epitaxial single crystalline hexagonal columns are observed with a low dispersion in size, indicating instantaneous tridimensional nucleation. Preliminary results on luminescence properties of the films before and after annealing are presented.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:22 p.m.) |
Indexed | 2 months ago (June 24, 2025, 6:48 a.m.) |
Issued | 25 years, 8 months ago (Dec. 13, 1999) |
Published | 25 years, 8 months ago (Dec. 13, 1999) |
Published Print | 25 years, 8 months ago (Dec. 13, 1999) |
@article{Pauport__1999, title={Heteroepitaxial electrodeposition of zinc oxide films on gallium nitride}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125466}, DOI={10.1063/1.125466}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pauporté, Th. and Lincot, D.}, year={1999}, month=dec, pages={3817–3819} }