DOI: 10.1063/1.125435. Coulomb blockade in quasimetallic silicon-on-insulator nanowires

Coulomb blockade in quasimetallic silicon-on-insulator nanowires

10.1063/1.125435

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Using highly doped silicon-on-insulator (SOI) films, we demonstrate metallic Coulomb blockade in silicon nanowires at temperatures up to almost 100 K. We propose a process that leads to island formation inside the wire due to a combination of structural roughness and segregation effects during thermal oxidation. Hence, no narrowing of the SOI wire is necessary to form tunneling contacts to the single-electron transistors.

Bibliography

Tilke, A., Blick, R. H., Lorenz, H., Kotthaus, J. P., & Wharam, D. A. (1999). Coulomb blockade in quasimetallic silicon-on-insulator nanowires. Applied Physics Letters, 75(23), 3704â3706.

Authors 5

A. Tilke (first)
R. H. Blick (additional)
H. Lorenz (additional)
J. P. Kotthaus (additional)
D. A. Wharam (additional)

References 11 Referenced 53

10.1063/1.114701 / Appl. Phys. Lett. (1995)
10.1063/1.121014 / Appl. Phys. Lett. (1998)
10.1063/1.120483 / Appl. Phys. Lett. (1997)
10.1063/1.120896 / Appl. Phys. Lett. (1998)
10.1063/1.363934 / J. Appl. Phys. (1997)
10.1063/1.96793 / Appl. Phys. Lett. (1986)
10.1116/1.590795 / J. Vac. Sci. Technol. B (1999)
10.1103/PhysRevB.44.1646 / Phys. Rev. B (1991)
10.1116/1.590441 / J. Vac. Sci. Technol. (1998)
10.1063/1.1713825 / J. Appl. Phys. (1964)
10.1103/PhysRevB.58.10990 / Phys. Rev. B (1998)

Dates

Type	When
Created	23 years ago (July 26, 2002, 8:58 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:16 p.m.)
Indexed	4 months, 1 week ago (April 14, 2025, 12:26 a.m.)
Issued	25 years, 8 months ago (Dec. 6, 1999)
Published	25 years, 8 months ago (Dec. 6, 1999)
Published Print	25 years, 8 months ago (Dec. 6, 1999)

Funders 0

None

BibTeX

@article{Tilke_1999, title={Coulomb blockade in quasimetallic silicon-on-insulator nanowires}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125435}, DOI={10.1063/1.125435}, number={23}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tilke, A. and Blick, R. H. and Lorenz, H. and Kotthaus, J. P. and Wharam, D. A.}, year={1999}, month=dec, pages={3704–3706} }

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