DOI: 10.1063/1.125370. Detection of gate oxide charge trapping by second-harmonic generation

Detection of gate oxide charge trapping by second-harmonic generation

10.1063/1.125370

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The high-electric-field-induced trapped oxide charge and neutral oxide traps of a metal–oxide–semiconductor field-effect transistor gate oxide are investigated by surface second-harmonic light generation (SHG). The electric-field dependence of the SHG intensity is sensitive to the charge trapped at the interface between the oxide and the silicon substrate. The time dependence of the SHG intensity probes the characteristics of the neutral trap sites in the oxide.

Bibliography

Fang, J., & Li, G. P. (1999). Detection of gate oxide charge trapping by second-harmonic generation. Applied Physics Letters, 75(22), 3506â3508.

Authors 2

J. Fang (first)
G. P. Li (additional)

References 11 Referenced 17

10.1007/BF00348272 / Appl. Phys. A: Solids Surf. (1994)
10.1103/PhysRevB.53.R7607 / Phys. Rev. B (1996)
10.1103/PhysRevLett.71.633 / Phys. Rev. Lett. (1993)
10.1103/PhysRevLett.77.920 / Phys. Rev. Lett. (1996)
10.1103/PhysRevLett.18.167 / Phys. Rev. Lett. (1967)
10.1116/1.579080 / J. Vac. Sci. Technol. A (1994)
10.1063/1.1144768 / Rev. Sci. Instrum. (1994)
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10.1063/1.338388 / J. Appl. Phys. (1987)
10.1063/1.103200 / Appl. Phys. Lett. (1990)
10.1063/1.94709 / Appl. Phys. Lett. (1984)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 12:18 p.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 10:39 p.m.)
Issued	25 years, 8 months ago (Nov. 29, 1999)
Published	25 years, 8 months ago (Nov. 29, 1999)
Published Print	25 years, 8 months ago (Nov. 29, 1999)

Funders 0

None

BibTeX

@article{Fang_1999, title={Detection of gate oxide charge trapping by second-harmonic generation}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125370}, DOI={10.1063/1.125370}, number={22}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Fang, J. and Li, G. P.}, year={1999}, month=nov, pages={3506–3508} }

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