Abstract
Using optical modulation spectroscopy, we report the direct observation of absorption lines from excitons localized in GaAs single quantum dot potentials. The data provide a measurement of the linewidth, resonance energy, and oscillator strength of the transitions, and show that states which decay primarily by nonradiative processes can be directly probed using this technique. The experiments establish this technique for the characterization of single quantum dot transitions, thereby complementing luminescence studies.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:29 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:07 p.m.) |
Indexed | 1 year, 5 months ago (March 16, 2024, 4:05 p.m.) |
Issued | 25 years, 9 months ago (Nov. 8, 1999) |
Published | 25 years, 9 months ago (Nov. 8, 1999) |
Published Print | 25 years, 9 months ago (Nov. 8, 1999) |
@article{Bonadeo_1999, title={Single quantum dot states measured by optical modulation spectroscopy}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125177}, DOI={10.1063/1.125177}, number={19}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bonadeo, N. H. and Lenihan, A. S. and Chen, Gang and Guest, J. R. and Steel, D. G. and Gammon, D. and Katzer, D. S. and Park, D.}, year={1999}, month=nov, pages={2933–2935} }