Abstract
Noncontact damping of a cantilever vibrating near a silicon surface was used to measure localized electrical dissipation. The dependence of the damping on tip-sample distance, applied voltage, carrier mobility, and dopant density was studied for n- and p-type silicon samples with dopant densities of 1014–1018 cm−3. Dopant imaging with 150 nm spatial resolution was demonstrated.
References
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:08 p.m.) |
Indexed | 4 months ago (April 17, 2025, 1:49 a.m.) |
Issued | 25 years, 9 months ago (Nov. 1, 1999) |
Published | 25 years, 9 months ago (Nov. 1, 1999) |
Published Print | 25 years, 9 months ago (Nov. 1, 1999) |
@article{Stowe_1999, title={Silicon dopant imaging by dissipation force microscopy}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125149}, DOI={10.1063/1.125149}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Stowe, T. D. and Kenny, T. W. and Thomson, D. J. and Rugar, D.}, year={1999}, month=nov, pages={2785–2787} }