Abstract
We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was ∼9 MW/cm2.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:29 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 12:09 p.m.) |
Indexed | 1 week, 2 days ago (Aug. 19, 2025, 6:32 a.m.) |
Issued | 25 years, 9 months ago (Nov. 1, 1999) |
Published | 25 years, 9 months ago (Nov. 1, 1999) |
Published Print | 25 years, 9 months ago (Nov. 1, 1999) |
@article{Cho_1999, title={Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125141}, DOI={10.1063/1.125141}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cho, Sunglae and Ma, Jing and Kim, Yunki and Sun, Yi and Wong, George K. L. and Ketterson, John B.}, year={1999}, month=nov, pages={2761–2763} }