Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We report a simple method for preparing polycrystalline ZnO thin films with good luminescent properties: the oxidization of metallic Zn films. In photoluminescence (PL) studies at room temperature for wavelengths between 370 and 675 nm, we have observed a single exciton peak around 390 nm without any deep-level emission and a small PL full width at half maximum (23 meV), indicating that the concentrations of the defects responsible for the deep-level emissions are negligible. We have also observed optically pumped lasing action in these films. The threshold intensity for lasing was ∼9 MW/cm2.

Bibliography

Cho, S., Ma, J., Kim, Y., Sun, Y., Wong, G. K. L., & Ketterson, J. B. (1999). Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn. Applied Physics Letters, 75(18), 2761–2763.

Authors 6
  1. Sunglae Cho (first)
  2. Jing Ma (additional)
  3. Yunki Kim (additional)
  4. Yi Sun (additional)
  5. George K. L. Wong (additional)
  6. John B. Ketterson (additional)
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 12:09 p.m.)
Indexed 1 week, 2 days ago (Aug. 19, 2025, 6:32 a.m.)
Issued 25 years, 9 months ago (Nov. 1, 1999)
Published 25 years, 9 months ago (Nov. 1, 1999)
Published Print 25 years, 9 months ago (Nov. 1, 1999)
Funders 0

None

@article{Cho_1999, title={Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125141}, DOI={10.1063/1.125141}, number={18}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cho, Sunglae and Ma, Jing and Kim, Yunki and Sun, Yi and Wong, George K. L. and Ketterson, John B.}, year={1999}, month=nov, pages={2761–2763} }