DOI: 10.1063/1.125053. Switching of vertical giant magnetoresistance devices by current through the device

Switching of vertical giant magnetoresistance devices by current through the device

10.1063/1.125053

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Experiments are reported that demonstrate current-perpendicular-to-the-plane giant magnetoresistance devices can be switched repeatably between the high- and low-resistance states by passing current vertically through the structure. The lithographically patterned devices, having diameters in the range of 0.3–0.7 μm, operate at room temperature and exhibit distinctly separate switching of the soft and hard layers. Designs for magnetoelectronic random access memory can utilize this scheme for storing and reading information.

Bibliography

Bussmann, K., Prinz, G. A., Cheng, S.-F., & Wang, D. (1999). Switching of vertical giant magnetoresistance devices by current through the device. Applied Physics Letters, 75(16), 2476â2478.

Authors 4

K. Bussmann (first)
G. A. Prinz (additional)
S.-F. Cheng (additional)
D. Wang (additional)

References 11 Referenced 106

10.1103/PhysRevLett.61.2472 / Phys. Rev. Lett. (1988)
10.1109/20.334164 / IEEE Trans. Magn. (1994)
10.1109/20.333909 / IEEE Trans. Magn. (1994)
{'key': '2024020316592934000_r4', 'first-page': '84', 'volume': '20', 'year': '1997', 'journal-title': 'Semicond. Int.'} / Semicond. Int. (1997)
10.1103/PhysRevLett.66.3060 / Phys. Rev. Lett. (1991)
10.1103/PhysRevLett.80.4281 / Phys. Rev. Lett. (1998)
10.1016/S0304-8853(99)00289-9 / J. Magn. Magn. Mater. (1999)
10.1063/1.370080 / J. Appl. Phys. (1999)
10.1109/20.706313 / IEEE Trans. Magn. (1998)
10.1063/1.120149 / Appl. Phys. Lett. (1997)
10.1063/1.355762 / J. Appl. Phys. (1994)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:59 a.m.)
Indexed	1 month, 3 weeks ago (July 4, 2025, 8:45 a.m.)
Issued	25 years, 10 months ago (Oct. 18, 1999)
Published	25 years, 10 months ago (Oct. 18, 1999)
Published Print	25 years, 10 months ago (Oct. 18, 1999)

Funders 0

None

BibTeX

@article{Bussmann_1999, title={Switching of vertical giant magnetoresistance devices by current through the device}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125053}, DOI={10.1063/1.125053}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Bussmann, K. and Prinz, G. A. and Cheng, S.-F. and Wang, D.}, year={1999}, month=oct, pages={2476–2478} }

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