DOI: 10.1063/1.125046. Large-scale synthesis of single crystalline gallium nitride nanowires

Large-scale synthesis of single crystalline gallium nitride nanowires

10.1063/1.125046

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Large-scale synthesis of single crystalline GaN nanowires in anodic alumina membrane was achieved through a gas reaction of Ga2O vapor with a constant flowing ammonia atmosphere at 1273 K. X-ray diffraction, Raman backscattering spectroscopy, scanning electron microscopy, and transmission electron microscopy indicated that those GaN nanowires with hexagonal wurtzite structure were about 14 nm in diameter and up to several hundreds of micrometers in length. The growth mechanism of the single crystalline GaN nanowires is discussed.

Bibliography

Cheng, G. S., Zhang, L. D., Zhu, Y., Fei, G. T., Li, L., Mo, C. M., & Mao, Y. Q. (1999). Large-scale synthesis of single crystalline gallium nitride nanowires. Applied Physics Letters, 75(16), 2455â2457.

Authors 7

G. S. Cheng (first)
L. D. Zhang (additional)
Y. Zhu (additional)
G. T. Fei (additional)
L. Li (additional)
C. M. Mo (additional)
Y. Q. Mao (additional)

References 17 Referenced 253

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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, noon)
Indexed	2 weeks, 4 days ago (Aug. 6, 2025, 8:21 a.m.)
Issued	25 years, 10 months ago (Oct. 18, 1999)
Published	25 years, 10 months ago (Oct. 18, 1999)
Published Print	25 years, 10 months ago (Oct. 18, 1999)

Funders 0

None

BibTeX

@article{Cheng_1999, title={Large-scale synthesis of single crystalline gallium nitride nanowires}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.125046}, DOI={10.1063/1.125046}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Cheng, G. S. and Zhang, L. D. and Zhu, Y. and Fei, G. T. and Li, L. and Mo, C. M. and Mao, Y. Q.}, year={1999}, month=oct, pages={2455–2457} }

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