DOI: 10.1063/1.124899. Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films

Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films

10.1063/1.124899

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Silica thin films containing Si nanocrystals and Er3+ were prepared by ion implantation. Excess Si concentrations ranged from 5% to 15%; Er3+ concentration for all samples was 0.5%. Samples exhibited photoluminescence at 742 nm (attributed to Si nanocrystals), 654 nm (defects due to Er3+ implantation), and at 1.53 μm (intra-4f transitions). Photoluminescence intensity at 1.53 μm increased ten times by incorporating Si nanocrystals. Strong, broad photoluminescence at 1.53 μm was observed for λPump away from Er3+ absorption peaks, implying energy transfer from Si nanocrystals. Erbium fluorescence lifetime decreased from 4 ms to 1 ms when excess Si increased from 5% to 15%, suggesting that at high Si content Er3+ ions are primarily situated inside Si nanocrystals.

Bibliography

Chryssou, C. E., Kenyon, A. J., Iwayama, T. S., Pitt, C. W., & Hole, D. E. (1999). Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films. Applied Physics Letters, 75(14), 2011â2013.

Authors 5

C. E. Chryssou (first)
A. J. Kenyon (additional)
T. S. Iwayama (additional)
C. W. Pitt (additional)
D. E. Hole (additional)

References 14 Referenced 122

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Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 11:57 a.m.)
Indexed	1 year, 5 months ago (March 16, 2024, 3:58 a.m.)
Issued	25 years, 11 months ago (Oct. 4, 1999)
Published	25 years, 11 months ago (Oct. 4, 1999)
Published Print	25 years, 11 months ago (Oct. 4, 1999)

Funders 0

None

BibTeX

@article{Chryssou_1999, title={Evidence of energy coupling between Si nanocrystals and Er3+ in ion-implanted silica thin films}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124899}, DOI={10.1063/1.124899}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Chryssou, C. E. and Kenyon, A. J. and Iwayama, T. S. and Pitt, C. W. and Hole, D. E.}, year={1999}, month=oct, pages={2011–2013} }

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