DOI: 10.1063/1.124887. High dielectric constant Hf–Sn–Ti

High dielectric constant Hf–Sn–Ti–O thin films

10.1063/1.124887

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

High dielectric constant Hf–Sn–Ti–O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250 °C have excellent dielectric properties: 40–70-nm-thick films with a dielectric constant of 40–60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9–17 fF/μm2. Breakdown fields were measured to be about 3–4 MV/cm, yielding a figure of merit εε0Ebr∼19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10−7−10−6 A/cm2.

Bibliography

Schneemeyer, L. F., van Dover, R. B., & Fleming, R. M. (1999). High dielectric constant HfâSnâTiâO thin films. Applied Physics Letters, 75(13), 1967â1969.

Authors 3

L. F. Schneemeyer (first)
R. B. van Dover (additional)
R. M. Fleming (additional)

References 11 Referenced 54

10.1109/55.506365 / IEEE Electron Device Lett. (1996)
10.1063/1.356227 / J. Appl. Phys. (1994)
{'key': '2024020316530587100_r3', 'first-page': '455', 'volume': 'ED-38', 'year': '1991', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1991)
{'key': '2024020316530587100_r3a'}
{'key': '2024020316530587100_r3b'}
10.1038/32381 / Nature (London) (1998)
10.1147/rd.136.0696 / IBM J. Res. Dev. (1969)
10.1007/BF00558177 / J. Mater. Sci. (1970)
10.1063/1.353856 / J. Appl. Phys. (1993)
10.1109/55.709630 / IEEE Electron Device Lett. (1998)
10.1111/j.1151-2916.1984.tb18847.x / J. Am. Ceram. Soc. (1984)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:53 a.m.)
Indexed	4 months, 1 week ago (April 17, 2025, 2:29 a.m.)
Issued	25 years, 10 months ago (Sept. 27, 1999)
Published	25 years, 10 months ago (Sept. 27, 1999)
Published Print	25 years, 10 months ago (Sept. 27, 1999)

Funders 0

None

BibTeX

@article{Schneemeyer_1999, title={High dielectric constant Hf–Sn–Ti–O thin films}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124887}, DOI={10.1063/1.124887}, number={13}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schneemeyer, L. F. and van Dover, R. B. and Fleming, R. M.}, year={1999}, month=sep, pages={1967–1969} }

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