DOI: 10.1063/1.124654. High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope

High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope

10.1063/1.124654

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have performed high spatial resolution thermal conductivity (κ) measurements at room temperature on different patterned sections of GaN/sapphire (0001) fabricated by lateral epitaxial overgrowth using a scanning thermal microscope. In a number of regions we find κ≈1.7–1.8 W/cm K, values that are substantially higher than κ≈1.3 W/cm K previously reported by Sichel and Pankove [J. Phys. Chem. Solids 38, 330 (1977)] on “bulk” material and comparable to the theoretical estimate of 1.7 W/cm K deduced by Slack [J. Phys. Chem. Solids 34, 321 (1973)]. The implications of these findings for device applications will be discussed.

Bibliography

Asnin, V. M., Pollak, F. H., Ramer, J., Schurman, M., & Ferguson, I. (1999). High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope. Applied Physics Letters, 75(9), 1240â1242.

Authors 5

V. M. Asnin (first)
Fred H. Pollak (additional)
J. Ramer (additional)
M. Schurman (additional)
I. Ferguson (additional)

References 15 Referenced 73

{'key': '2024020316444607300_r1', 'first-page': '29', 'volume': '22', 'year': '1997', 'journal-title': 'MRS Bull.'} / MRS Bull. (1997)
{'key': '2024020316444607300_r2', 'first-page': '44', 'volume': '22', 'year': '1997', 'journal-title': 'MRS Bull.'} / MRS Bull. (1997)
{'key': '2024020316444607300_r3'}
{'key': '2024020316444607300_r4'}
10.1016/0022-3697(77)90112-3 / J. Phys. Chem. Solids (1977)
10.1016/0022-3697(73)90092-9 / J. Phys. Chem. Solids (1973)
10.1063/1.122287 / Appl. Phys. Lett. (1998)
{'key': '2024020316444607300_r8'}
10.1557/S1092578300000752 / MRS Internet J. Nitride Semicond. Res. (1998)
{'key': '2024020316444607300_r10'}
10.1557/S1092578300000594 / MRS Internet J. Nitride Semicond. Res. (1999)
{'key': '2024020316444607300_r12'}
10.1063/1.1147100 / Rev. Sci. Instrum. (1996)
10.1016/0040-6090(92)90123-S / Thin Solid Films (1992)
10.1063/1.123839 / Appl. Phys. Lett. (1999)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:44 a.m.)
Indexed	3 months ago (May 27, 2025, 4:46 a.m.)
Issued	26 years ago (Aug. 30, 1999)
Published	26 years ago (Aug. 30, 1999)
Published Print	26 years ago (Aug. 30, 1999)

Funders 0

None

BibTeX

@article{Asnin_1999, title={High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124654}, DOI={10.1063/1.124654}, number={9}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Asnin, V. M. and Pollak, Fred H. and Ramer, J. and Schurman, M. and Ferguson, I.}, year={1999}, month=aug, pages={1240–1242} }

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