DOI: 10.1063/1.124614. Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films

Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films

10.1063/1.124614

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The Ga2O3(Gd2O3) dielectric film was previously discovered to passivate the GaAs surface effectively. We have investigated the systematic dependence of the dielectric properties of (Ga2O3)1−x(Gd2O3)x on the Gd (x) content. Our results show that pure Ga2O3 does not passivate GaAs. Films with x⩾14% are electrically insulating with low leakage current and high electrical breakdown strength. Furthermore, a low interfacial density of states was attained in films with x⩾14%. The results show the important role of Gd2O3 in the (Ga2O3)1−x(Gd2O3)x dielectric films for effective passivation of GaAs.

Bibliography

Kwo, J., Murphy, D. W., Hong, M., Opila, R. L., Mannaerts, J. P., Sergent, A. M., & Masaitis, R. L. (1999). Passivation of GaAs using (Ga2O3)1âx(Gd2O3)x,â0â©½xâ©½1.0 films. Applied Physics Letters, 75(8), 1116â1118.

Authors 7

J. Kwo (first)
D. W. Murphy (additional)
M. Hong (additional)
R. L. Opila (additional)
J. P. Mannaerts (additional)
A. M. Sergent (additional)
R. L. Masaitis (additional)

References 16 Referenced 78

10.1111/j.1151-2916.1963.tb14627.x / J. Am. Ceram. Soc. (1963)
10.1063/1.1782162 / J. Appl. Phys. (1966)
10.1109/T-ED.1978.19139 / IEEE Trans. Electron Devices (1978)
10.1063/1.90411 / Appl. Phys. Lett. (1978)
{'key': '2024020316455540600_r5'}
10.1116/1.588924 / J. Vac. Sci. Technol. B (1996)
10.1063/1.363664 / J. Appl. Phys. (1996)
10.1109/16.557709 / IEEE Trans. Electron Devices (1997)
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10.1016/0022-0248(95)80221-W / J. Cryst. Growth (1995)
10.1116/1.590082 / J. Vac. Sci. Technol. B (1998)
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10.1063/1.354107 / J. Appl. Phys. (1993)
10.1016/0022-4596(78)90066-X / J. Solid State Chem. (1978)
10.1524/zpch.1973.84.5_6.325 / Z. Phys. Chem. (Munich) (1973)
{'key': '2024020316455540600_r16'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 11:46 a.m.)
Indexed	5 months, 2 weeks ago (March 22, 2025, 4:31 a.m.)
Issued	26 years ago (Aug. 23, 1999)
Published	26 years ago (Aug. 23, 1999)
Published Print	26 years ago (Aug. 23, 1999)

Funders 0

None

BibTeX

@article{Kwo_1999, title={Passivation of GaAs using (Ga2O3)1−x(Gd2O3)x, 0⩽x⩽1.0 films}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124614}, DOI={10.1063/1.124614}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Kwo, J. and Murphy, D. W. and Hong, M. and Opila, R. L. and Mannaerts, J. P. and Sergent, A. M. and Masaitis, R. L.}, year={1999}, month=aug, pages={1116–1118} }

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