DOI: 10.1063/1.124566. Modeling the breakdown spots in silicon dioxide films as point contacts

Modeling the breakdown spots in silicon dioxide films as point contacts

10.1063/1.124566

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Experiments and simulations are combined to demonstrate that the hard dielectric breakdown of thin SiO2 films in polycrystaline silicon/oxide/semiconductor structures leads to the formation of conduction paths with atomic-size dimensions which behave as point contacts between the silicon electrodes. Depending on the area of the breakdown spots, the conduction properties of the breakdown paths are shown to be those of a classical Sharvin point contact or of a quantum point contact.

Bibliography

SuÃ±Ã©, J., Miranda, E., NafrÃa, M., & Aymerich, X. (1999). Modeling the breakdown spots in silicon dioxide films as point contacts. Applied Physics Letters, 75(7), 959â961.

Authors 4

J. Suñé (first)
E. Miranda (additional)
M. Nafría (additional)
X. Aymerich (additional)

References 18 Referenced 31

10.1063/1.352936 / J. Appl. Phys. (1993)
{'key': '2024020316402055400_r2', 'first-page': '761', 'volume': 'ED-41', 'year': '1994', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1994)
10.1016/0040-6090(90)90098-X / Thin Solid Films (1990)
10.1109/16.658683 / IEEE Trans. Electron Devices (1998)
10.1063/1.120480 / Appl. Phys. Lett. (1997)
10.1063/1.353884 / J. Appl. Phys. (1993)
{'key': '2024020316402055400_r7', 'first-page': '655', 'volume': '21', 'year': '1965', 'journal-title': 'Sov. Phys. JETP'} / Sov. Phys. JETP (1965)
10.1088/0022-3719/13/33/009 / J. Phys. C (1980)
10.1103/PhysRevLett.60.848 / Phys. Rev. Lett. (1988)
10.1088/0022-3719/21/8/002 / J. Phys. C (1988)
10.1103/PhysRevB.41.3874 / Phys. Rev. B (1990)
10.1103/PhysRevB.55.R16029 / Phys. Rev. B (1997)
10.1103/PhysRevB.44.13549 / Phys. Rev. B (1991)
10.1063/1.123153 / Appl. Phys. Lett. (1999)
10.1063/1.121910 / Appl. Phys. Lett. (1998)
10.1063/1.119328 / Appl. Phys. Lett. (1997)
10.1103/PhysRevB.47.15630 / Phys. Rev. B (1993)
{'key': '2024020316402055400_r18'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:40 a.m.)
Indexed	5 months ago (April 1, 2025, 8:42 a.m.)
Issued	26 years ago (Aug. 16, 1999)
Published	26 years ago (Aug. 16, 1999)
Published Print	26 years ago (Aug. 16, 1999)

Funders 0

None

BibTeX

@article{Su__1999, title={Modeling the breakdown spots in silicon dioxide films as point contacts}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124566}, DOI={10.1063/1.124566}, number={7}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Suñé, J. and Miranda, E. and Nafría, M. and Aymerich, X.}, year={1999}, month=aug, pages={959–961} }

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