DOI: 10.1063/1.124446. Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures

10.1063/1.124446

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We report fabrication and characterization of p-channel metal–ferroelectric-metal–insulator–semiconductor (MFMIS) field-effect transistors (FETs) using the Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures. It is shown that SrTa2O6/SiON stacked layer is suitable as an “I” layer in the MFMIS structure, because the SrTa2O6/SiON/Si structure has low leakage current and good interface properties. We also show that by using a small MFM capacitor on a large MIS structure, a large memory window of 3.0 V can be obtained. Furthermore, it is found that the data retention characteristics have been improved for Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si MFMIS-FETs.

Bibliography

Tokumitsu, E., Fujii, G., & Ishiwara, H. (1999). Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures. Applied Physics Letters, 75(4), 575â577.

Authors 3

Eisuke Tokumitsu (first)
Gen Fujii (additional)
Hiroshi Ishiwara (additional)

References 9 Referenced 115

{'key': '2024020316370844800_r1'}
{'key': '2024020316370844800_r2', 'first-page': '333', 'volume': 'ED-10', 'year': '1963', 'journal-title': 'IEEE Trans. Electron Devices'} / IEEE Trans. Electron Devices (1963)
{'key': '2024020316370844800_r3', 'first-page': '442', 'volume': '32', 'year': '1993', 'journal-title': 'Jpn. J. Appl. Phys., Part 1'} / Jpn. J. Appl. Phys., Part 1 (1993)
10.1143/JJAP.33.5172 / Jpn. J. Appl. Phys., Part 1 (1994)
{'key': '2024020316370844800_r5', 'first-page': '160', 'volume': 'EDL-18', 'year': '1997', 'journal-title': 'IEEE Electron Device Lett.'} / IEEE Electron Device Lett. (1997)
10.1143/JJAP.36.5908 / Jpn. J. Appl. Phys., Part 1 (1997)
10.1080/10584589508019351 / Integr. Ferroelectr. (1995)
10.1109/16.506774 / IEEE Trans. Electron Devices (1996)
{'key': '2024020316370844800_r9', 'first-page': '459', 'volume': '493', 'year': '1998', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1998)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:37 a.m.)
Indexed	3 weeks, 4 days ago (July 27, 2025, 3:15 a.m.)
Issued	26 years ago (July 26, 1999)
Published	26 years ago (July 26, 1999)
Published Print	26 years ago (July 26, 1999)

Funders 0

None

BibTeX

@article{Tokumitsu_1999, title={Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124446}, DOI={10.1063/1.124446}, number={4}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tokumitsu, Eisuke and Fujii, Gen and Ishiwara, Hiroshi}, year={1999}, month=jul, pages={575–577} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        7,
        27
      ]
    ],
    "date-time": "2025-07-27T07:15:05Z",
    "timestamp": 1753600505085
  },
  "reference-count": 9,
  "publisher": "AIP Publishing",
  "issue": "4",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1999,
        7,
        26
      ]
    ]
  },
  "abstract": "<jats:p>We report fabrication and characterization of p-channel metal\u2013ferroelectric-metal\u2013insulator\u2013semiconductor (MFMIS) field-effect transistors (FETs) using the Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures. It is shown that SrTa2O6/SiON stacked layer is suitable as an \u201cI\u201d layer in the MFMIS structure, because the SrTa2O6/SiON/Si structure has low leakage current and good interface properties. We also show that by using a small MFM capacitor on a large MIS structure, a large memory window of 3.0 V can be obtained. Furthermore, it is found that the data retention characteristics have been improved for Pt/SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si MFMIS-FETs.</jats:p>",
  "DOI": "10.1063/1.124446",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:29:08Z",
    "timestamp": 1027690148000
  },
  "page": "575-577",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 115,
  "title": "Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures",
  "prefix": "10.1063",
  "volume": "75",
  "author": [
    {
      "given": "Eisuke",
      "family": "Tokumitsu",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Precision & Intelligence Laboratory, Tokyo Institute of Technology, 4259 Nagatuta, Midori-ku, Yokohama\u2009226-8503, Japan"
        }
      ]
    },
    {
      "given": "Gen",
      "family": "Fujii",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatuta, Midori-ku, Yokohama\u2009226-8503, Japan"
        }
      ]
    },
    {
      "given": "Hiroshi",
      "family": "Ishiwara",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatuta, Midori-ku, Yokohama\u2009226-8503, Japan"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020316370844800_r1"
    },
    {
      "key": "2024020316370844800_r2",
      "first-page": "333",
      "volume": "ED-10",
      "year": "1963",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020316370844800_r3",
      "first-page": "442",
      "volume": "32",
      "year": "1993",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020316370844800_r4",
      "doi-asserted-by": "crossref",
      "first-page": "5172",
      "DOI": "10.1143/JJAP.33.5172",
      "volume": "33",
      "year": "1994",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020316370844800_r5",
      "first-page": "160",
      "volume": "EDL-18",
      "year": "1997",
      "journal-title": "IEEE Electron Device Lett."
    },
    {
      "key": "2024020316370844800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "5908",
      "DOI": "10.1143/JJAP.36.5908",
      "volume": "36",
      "year": "1997",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020316370844800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "23",
      "DOI": "10.1080/10584589508019351",
      "volume": "6",
      "year": "1995",
      "journal-title": "Integr. Ferroelectr."
    },
    {
      "key": "2024020316370844800_r8",
      "doi-asserted-by": "crossref",
      "first-page": "1233",
      "DOI": "10.1109/16.506774",
      "volume": "43",
      "year": "1996",
      "journal-title": "IEEE Trans. Electron Devices"
    },
    {
      "key": "2024020316370844800_r9",
      "first-page": "459",
      "volume": "493",
      "year": "1998",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/75/4/575/18543349/575_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/75/4/575/18543349/575_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T16:37:17Z",
    "timestamp": 1706978237000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/75/4/575/110224/Nonvolatile-ferroelectric-gate-field-effect"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1999,
        7,
        26
      ]
    ]
  },
  "references-count": 9,
  "journal-issue": {
    "issue": "4",
    "published-print": {
      "date-parts": [
        [
          1999,
          7,
          26
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.124446",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1999,
        7,
        26
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1999,
        7,
        26
      ]
    ]
  }
}