Abstract
Ultrathin, high-sensitivity piezoresistive cantilevers were constructed using vapor-phase epitaxy to grow the conducting layer. A fourfold reduction in thickness was achieved over the thinnest implanted piezoresistive cantilevers, allowing improved force or displacement sensitivity and increased bandwidth. In cantilevers 890 Å thick, the dopant is well confined to the surface, and the sensitivity is 70% of the theoretical maximum. A cantilever fabricated for high force resolution has a minimum detectable force of 8.6 fN/Hz in air. Additionally, the 1/f noise is shown to follow the relation proposed by Hooge [Phys. Lett A 29, 139 (1969)], increasing in inverse proportion to the number of carriers.
References
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:42 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 11:33 a.m.) |
Indexed | 2 months, 2 weeks ago (June 10, 2025, 2:44 p.m.) |
Issued | 26 years, 1 month ago (July 12, 1999) |
Published | 26 years, 1 month ago (July 12, 1999) |
Published Print | 26 years, 1 month ago (July 12, 1999) |
@article{Harley_1999, title={High-sensitivity piezoresistive cantilevers under 1000 Å thick}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124350}, DOI={10.1063/1.124350}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Harley, J. A. and Kenny, T. W.}, year={1999}, month=jul, pages={289–291} }