Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

Strong room-temperature photoluminescence (PL) peaks of Er3+ (4I13/2→4I15/2) ions at ∼1.535 μm are obtained from Er-doped thin-film Si layers prepared by laser ablation. The Si sample was found to produce optimum photoluminescence peaks at an annealing temperature of about 450 °C. Experimental results also shows that the thermal quenching of the luminescence intensity from 80 K to room temperature is a factor of 2.5 only. PL excitation measurements reveal that the Er luminescence is significantly excited via the silicon band edge. The lifetime of the luminescence from the Si:Er samples is 90±10 μs.

Bibliography

Ng, W. L., Temple, M. P., Childs, P. A., Wellhofer, F., & Homewood, K. P. (1999). Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation. Applied Physics Letters, 75(1), 97–99.

Authors 5
  1. Wai Lek Ng (first)
  2. M. P. Temple (additional)
  3. P. A. Childs (additional)
  4. F. Wellhofer (additional)
  5. K. P. Homewood (additional)
References 26 Referenced 13
  1. 10.1063/1.94190 / Appl. Phys. Lett. (1983)
  2. 10.1063/1.95639 / Appl. Phys. Lett. (1985)
  3. 10.1063/1.368100 / J. Appl. Phys. (1998)
  4. 10.1063/1.120479 / Appl. Phys. Lett. (1997)
  5. 10.1063/1.120234 / Appl. Phys. Lett. (1997)
  6. 10.1063/1.119715 / Appl. Phys. Lett. (1997)
  7. 10.1063/1.119480 / Appl. Phys. Lett. (1997)
  8. 10.1063/1.118693 / Appl. Phys. Lett. (1997)
  9. 10.1063/1.118377 / Appl. Phys. Lett. (1997)
  10. 10.1063/1.117562 / Appl. Phys. Lett. (1996)
  11. {'key': '2024020316260497100_r11', 'first-page': '2235', 'volume': '64', 'year': '1993', 'journal-title': 'Appl. Phys. Lett.'} / Appl. Phys. Lett. (1993)
  12. 10.1063/1.101888 / Appl. Phys. Lett. (1989)
  13. 10.1063/1.121791 / Appl. Phys. Lett. (1998)
  14. 10.1063/1.362759 / J. Appl. Phys. (1996)
  15. 10.1063/1.116577 / Appl. Phys. Lett. (1996)
  16. 10.1063/1.361136 / J. Appl. Phys. (1996)
  17. 10.1063/1.102760 / Appl. Phys. Lett. (1990)
  18. 10.1063/1.110608 / Appl. Phys. Lett. (1993)
  19. 10.1063/1.360125 / J. Appl. Phys. (1995)
  20. 10.1063/1.115330 / Appl. Phys. Lett. (1995)
  21. 10.1063/1.116124 / Appl. Phys. Lett. (1996)
  22. 10.1063/1.118196 / Appl. Phys. Lett. (1997)
  23. {'key': '2024020316260497100_r23', 'first-page': '51', 'volume': '235', 'year': '1992', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1992)
  24. 10.1088/0268-1242/8/7/015 / Semicond. Sci. Technol. (1993)
  25. 10.1016/0038-1098(89)90614-5 / Solid State Commun. (1989)
  26. 10.1063/1.349381 / J. Appl. Phys. (1991)
Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 8:42 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 11:26 a.m.)
Indexed 1 year, 6 months ago (Feb. 3, 2024, 8 p.m.)
Issued 26 years, 1 month ago (July 5, 1999)
Published 26 years, 1 month ago (July 5, 1999)
Published Print 26 years, 1 month ago (July 5, 1999)
Funders 0

None

@article{Ng_1999, title={Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124324}, DOI={10.1063/1.124324}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ng, Wai Lek and Temple, M. P. and Childs, P. A. and Wellhofer, F. and Homewood, K. P.}, year={1999}, month=jul, pages={97–99} }