Abstract
Strong room-temperature photoluminescence (PL) peaks of Er3+ (4I13/2→4I15/2) ions at ∼1.535 μm are obtained from Er-doped thin-film Si layers prepared by laser ablation. The Si sample was found to produce optimum photoluminescence peaks at an annealing temperature of about 450 °C. Experimental results also shows that the thermal quenching of the luminescence intensity from 80 K to room temperature is a factor of 2.5 only. PL excitation measurements reveal that the Er luminescence is significantly excited via the silicon band edge. The lifetime of the luminescence from the Si:Er samples is 90±10 μs.
References
26
Referenced
13
10.1063/1.94190
/ Appl. Phys. Lett. (1983)10.1063/1.95639
/ Appl. Phys. Lett. (1985)10.1063/1.368100
/ J. Appl. Phys. (1998)10.1063/1.120479
/ Appl. Phys. Lett. (1997)10.1063/1.120234
/ Appl. Phys. Lett. (1997)10.1063/1.119715
/ Appl. Phys. Lett. (1997)10.1063/1.119480
/ Appl. Phys. Lett. (1997)10.1063/1.118693
/ Appl. Phys. Lett. (1997)10.1063/1.118377
/ Appl. Phys. Lett. (1997)10.1063/1.117562
/ Appl. Phys. Lett. (1996){'key': '2024020316260497100_r11', 'first-page': '2235', 'volume': '64', 'year': '1993', 'journal-title': 'Appl. Phys. Lett.'}
/ Appl. Phys. Lett. (1993)10.1063/1.101888
/ Appl. Phys. Lett. (1989)10.1063/1.121791
/ Appl. Phys. Lett. (1998)10.1063/1.362759
/ J. Appl. Phys. (1996)10.1063/1.116577
/ Appl. Phys. Lett. (1996)10.1063/1.361136
/ J. Appl. Phys. (1996)10.1063/1.102760
/ Appl. Phys. Lett. (1990)10.1063/1.110608
/ Appl. Phys. Lett. (1993)10.1063/1.360125
/ J. Appl. Phys. (1995)10.1063/1.115330
/ Appl. Phys. Lett. (1995)10.1063/1.116124
/ Appl. Phys. Lett. (1996)10.1063/1.118196
/ Appl. Phys. Lett. (1997){'key': '2024020316260497100_r23', 'first-page': '51', 'volume': '235', 'year': '1992', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'}
/ Mater. Res. Soc. Symp. Proc. (1992)10.1088/0268-1242/8/7/015
/ Semicond. Sci. Technol. (1993)10.1016/0038-1098(89)90614-5
/ Solid State Commun. (1989)10.1063/1.349381
/ J. Appl. Phys. (1991)
Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 8:42 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 11:26 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 3, 2024, 8 p.m.) |
Issued | 26 years, 1 month ago (July 5, 1999) |
Published | 26 years, 1 month ago (July 5, 1999) |
Published Print | 26 years, 1 month ago (July 5, 1999) |
@article{Ng_1999, title={Photoluminescence and photoluminescence excitation spectroscopy of Er-doped Si prepared by laser ablation}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124324}, DOI={10.1063/1.124324}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Ng, Wai Lek and Temple, M. P. and Childs, P. A. and Wellhofer, F. and Homewood, K. P.}, year={1999}, month=jul, pages={97–99} }