Abstract
A structure based on a bipolar transport/emitting layer is proposed and implemented for making organic light-emitting diodes. Compared to the conventional heterojunction organic light-emitting diodes, more than a factor of six improvement in device reliability (a projected operating lifetime of 70 000 h) is achieved in the structure. The significant improvement in device lifetime is attributed to the elimination of the heterointerface present in the conventional devices which greatly affects the device reliability.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 8:58 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 11:32 a.m.) |
Indexed | 2 weeks, 4 days ago (Aug. 5, 2025, 8:12 a.m.) |
Issued | 26 years, 1 month ago (July 12, 1999) |
Published | 26 years, 1 month ago (July 12, 1999) |
Published Print | 26 years, 1 month ago (July 12, 1999) |
@article{Choong_1999, title={Organic light-emitting diodes with a bipolar transport layer}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124309}, DOI={10.1063/1.124309}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choong, Vi-En and Shi, Song and Curless, Jay and Shieh, Chan-Long and Lee, H.-C. and So, Franky and Shen, Jun and Yang, Jie}, year={1999}, month=jul, pages={172–174} }