DOI: 10.1063/1.124255. Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer

Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer

10.1063/1.124255

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

The ferroelectric SrBi2Ta2O9 (SBT) and YMnO3 buffer layers for the metal/ferroelectric/ insulator/semiconductor (MFIS) structure were deposited using pulsed-laser ablation and metalorganic chemical vapor deposition, respectively. Memory windows of the MFIS structure were in the range of 0.3–1.5 V when the gate voltage varied from 2 to 6 V. There were no reactions between ferroelectric SBT and Si in the MFIS structure annealed at 900 °C. The YMnO3 buffer layer plays an important role in alleviating the interdiffusion between elements of SBT and Si. The proposed MFIS structure of Pt/200 nm–SBT/25 nm–YMnO3/Si is attractive for nondestructive read-out ferroelectric random access memory applications.

Bibliography

Choi, K.-J., Shin, W.-C., Yang, J.-H., & Yoon, S.-G. (1999). Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer. Applied Physics Letters, 75(5), 722â724.

Authors 4

Kyu-Jeong Choi (first)
Woong-Chul Shin (additional)
Jung-Hwan Yang (additional)
Soon-Gil Yoon (additional)

References 11 Referenced 46

10.1063/1.322014 / J. Appl. Phys. (1975)
10.1080/00150199108007944 / Ferroelectrics (1991)
10.1080/00150199108007937 / Ferroelectrics (1991)
10.1080/10584589408017010 / Integr. Ferroelectr. (1994)
10.1143/JJAP.33.5219 / Jpn. J. Appl. Phys., Part 1 (1994)
10.1143/JJAP.34.5202 / Jpn. J. Appl. Phys., Part 1 (1995)
{'key': '2024020316343737200_r7', 'first-page': '1562', 'volume': '32', 'year': '1998', 'journal-title': 'J. Korean Phys. Soc.'} / J. Korean Phys. Soc. (1998)
10.1063/1.120374 / Appl. Phys. Lett. (1997)
10.1080/10584589708013017 / Integr. Ferroelectr. (1997)
10.1143/JJAP.35.L1680 / Jpn. J. Appl. Phys., Part 2 (1996)
{'key': '2024020316343737200_r11', 'first-page': 's1632', 'volume': '32', 'year': '1998', 'journal-title': 'J. Korean Phys. Soc.'} / J. Korean Phys. Soc. (1998)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:29 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:34 a.m.)
Indexed	4 months, 3 weeks ago (April 10, 2025, 7:09 a.m.)
Issued	26 years ago (Aug. 2, 1999)
Published	26 years ago (Aug. 2, 1999)
Published Print	26 years ago (Aug. 2, 1999)

Funders 0

None

BibTeX

@article{Choi_1999, title={Metal/ferroelectric/insulator/semiconductor structure of Pt/SrBi2Ta2O9/YMnO3/Si using YMnO3 as the buffer layer}, volume={75}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124255}, DOI={10.1063/1.124255}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Choi, Kyu-Jeong and Shin, Woong-Chul and Yang, Jung-Hwan and Yoon, Soon-Gil}, year={1999}, month=aug, pages={722–724} }

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