Abstract
Epitaxial Ba2RuO4 films with the K2NiF4 structure have been grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction and cross-sectional transmission electron microscopy results indicate that the films are c-axis oriented, single-domain, and contain relatively few stacking faults and intergrowths. Electrical measurements indicate metallic conductivity to low temperatures, but no evidence of superconductivity.
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 11:24 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 5, 2024, 12:24 p.m.) |
Issued | 26 years, 2 months ago (June 21, 1999) |
Published | 26 years, 2 months ago (June 21, 1999) |
Published Print | 26 years, 2 months ago (June 21, 1999) |
@article{Jia_1999, title={Epitaxial growth of metastable Ba2RuO4 films with the K2NiF4 structure}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124194}, DOI={10.1063/1.124194}, number={25}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Jia, Y. and Zurbuchen, M. A. and Wozniak, S. and Carim, A. H. and Schlom, D. G. and Zou, L-N. and Briczinski, S. and Liu, Y.}, year={1999}, month=jun, pages={3830–3832} }