Abstract
Surface-emitting organic light emitting diode (OLED) was prepared by sputter deposition of indium-tin-oxide on a buffered organic layer structure. Confirming a previous report, a thin film of copper phthalocyanine (CuPc) was found to be a useful buffer layer in preventing sputter damage to the OLED layer structure, particularly the underlying Alq emissive layer. However, the CuPc layer forms an electron-injection barrier with the Alq layer, resulting in increased electron-hole recombination in the nonemissive CuPc layer, and thus a substantial reduction in electroluminescence efficiency. Incorporation of Li at the CuPc/Alq interface was found to reduce the injection barrier at the interface and recover the overall device efficiency with good surface emission characteristics.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 11:12 a.m.) |
Indexed | 4 months, 4 weeks ago (March 26, 2025, 1:35 p.m.) |
Issued | 26 years, 3 months ago (May 24, 1999) |
Published | 26 years, 3 months ago (May 24, 1999) |
Published Print | 26 years, 3 months ago (May 24, 1999) |
@article{Hung_1999, title={Interface engineering in preparation of organic surface-emitting diodes}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124107}, DOI={10.1063/1.124107}, number={21}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Hung, L. S. and Tang, C. W.}, year={1999}, month=may, pages={3209–3211} }