DOI: 10.1063/1.124055. Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications

Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications

10.1063/1.124055

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Aluminum nitride thin films have been grown by reactive magnetron sputter technique using a pulsed power supply. The highly (002)-textured columnar films deposited on platinized silicon substrates exhibited quasi-single-crystal piezoelectric properties. The effective d33 was measured as 3.4 pm/V, the effective e31 as 1.0 C/m2. The pyroelectric coefficient turned out to be positive (4.8 μC m−2 K−1) due to a dominating piezoelectric contribution. Thin-film bulk acoustic resonators (TFBAR) with fundamental resonance at 3.6 GHz have been fabricated to assess resonator properties. The material parameters derived from the thickness resonance were a coupling factor k=0.23 and a sound velocity vs=11 400 m/s. With a quality factor Q of 300, the TFBARs proved to be apt for filter applications. The temperature coefficient of the frequency could be tuned to practically 0 ppm/K.

Bibliography

Dubois, M.-A., & Muralt, P. (1999). Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications. Applied Physics Letters, 74(20), 3032â3034.

Authors 2

Marc-Alexandre Dubois (first)
Paul Muralt (additional)

References 16 Referenced 385

10.1063/1.92298 / Appl. Phys. Lett. (1981)
10.1049/el:19810355 / Electron. Lett. (1981)
10.1063/1.91745 / Appl. Phys. Lett. (1980)
{'key': '2024020316094851800_r4', 'first-page': '634', 'volume': 'SU-32', 'year': '1985', 'journal-title': 'IEEE Trans. Sonics Ultrason.'} / IEEE Trans. Sonics Ultrason. (1985)
{'key': '2024020316094851800_r5', 'first-page': '25', 'volume': '4', 'year': '1974', 'journal-title': 'J. Electron. Mater.'} / J. Electron. Mater. (1974)
10.1143/JJAP.34.2668 / Jpn. J. Appl. Phys., Part 1 (1995)
10.1116/1.576886 / J. Vac. Sci. Technol. A (1990)
{'key': '2024020316094851800_r8'}
10.1080/10584589808208072 / Integr. Ferroelectr. (1998)
10.1063/1.1147000 / Rev. Sci. Instrum. (1996)
10.1063/1.325442 / J. Appl. Phys. (1978)
10.1080/10584589808208067 / Integr. Ferroelectr. (1998)
10.1111/j.1151-2916.1993.tb03730.x / J. Am. Ceram. Soc. (1993)
{'key': '2024020316094851800_r14'}
{'key': '2024020316094851800_r15'}
10.1557/JMR.1992.3242 / J. Mater. Res. (1992)

Dates

Type	When
Created	23 years ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:09 a.m.)
Indexed	3 days, 23 hours ago (Aug. 19, 2025, 6:23 a.m.)
Issued	26 years, 3 months ago (May 17, 1999)
Published	26 years, 3 months ago (May 17, 1999)
Published Print	26 years, 3 months ago (May 17, 1999)

Funders 0

None

BibTeX

@article{Dubois_1999, title={Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.124055}, DOI={10.1063/1.124055}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Dubois, Marc-Alexandre and Muralt, Paul}, year={1999}, month=may, pages={3032–3034} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        8,
        19
      ]
    ],
    "date-time": "2025-08-19T10:23:37Z",
    "timestamp": 1755599017268
  },
  "reference-count": 16,
  "publisher": "AIP Publishing",
  "issue": "20",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1999,
        5,
        17
      ]
    ]
  },
  "abstract": "<jats:p>Aluminum nitride thin films have been grown by reactive magnetron sputter technique using a pulsed power supply. The highly (002)-textured columnar films deposited on platinized silicon substrates exhibited quasi-single-crystal piezoelectric properties. The effective d33 was measured as 3.4 pm/V, the effective e31 as 1.0 C/m2. The pyroelectric coefficient turned out to be positive (4.8 \u03bcC\u200am\u22122\u200aK\u22121) due to a dominating piezoelectric contribution. Thin-film bulk acoustic resonators (TFBAR) with fundamental resonance at 3.6 GHz have been fabricated to assess resonator properties. The material parameters derived from the thickness resonance were a coupling factor k=0.23 and a sound velocity vs=11\u200a400\u200am/s. With a quality factor Q of 300, the TFBARs proved to be apt for filter applications. The temperature coefficient of the frequency could be tuned to practically 0 ppm/K.</jats:p>",
  "DOI": "10.1063/1.124055",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:31:28Z",
    "timestamp": 1027690288000
  },
  "page": "3032-3034",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 385,
  "title": "Properties of aluminum nitride thin films for piezoelectric transducers and microwave filter applications",
  "prefix": "10.1063",
  "volume": "74",
  "author": [
    {
      "given": "Marc-Alexandre",
      "family": "Dubois",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Ceramics Laboratory, Dept. of Materials, Swiss Federal Institute of Technology, 1015\u2009Lausanne, Switzerland"
        }
      ]
    },
    {
      "given": "Paul",
      "family": "Muralt",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Ceramics Laboratory, Dept. of Materials, Swiss Federal Institute of Technology, 1015\u2009Lausanne, Switzerland"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020316094851800_r1",
      "doi-asserted-by": "crossref",
      "first-page": "125",
      "DOI": "10.1063/1.92298",
      "volume": "38",
      "year": "1981",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020316094851800_r2",
      "doi-asserted-by": "crossref",
      "first-page": "507",
      "DOI": "10.1049/el:19810355",
      "volume": "17",
      "year": "1981",
      "journal-title": "Electron. Lett."
    },
    {
      "key": "2024020316094851800_r3",
      "doi-asserted-by": "crossref",
      "first-page": "993",
      "DOI": "10.1063/1.91745",
      "volume": "37",
      "year": "1980",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020316094851800_r4",
      "first-page": "634",
      "volume": "SU-32",
      "year": "1985",
      "journal-title": "IEEE Trans. Sonics Ultrason."
    },
    {
      "key": "2024020316094851800_r5",
      "first-page": "25",
      "volume": "4",
      "year": "1974",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020316094851800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "2668",
      "DOI": "10.1143/JJAP.34.2668",
      "volume": "34",
      "year": "1995",
      "journal-title": "Jpn. J. Appl. Phys., Part 1"
    },
    {
      "key": "2024020316094851800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1382",
      "DOI": "10.1116/1.576886",
      "volume": "8",
      "year": "1990",
      "journal-title": "J. Vac. Sci. Technol. A"
    },
    {
      "key": "2024020316094851800_r8"
    },
    {
      "key": "2024020316094851800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "535",
      "DOI": "10.1080/10584589808208072",
      "volume": "22",
      "year": "1998",
      "journal-title": "Integr. Ferroelectr."
    },
    {
      "key": "2024020316094851800_r10",
      "doi-asserted-by": "crossref",
      "first-page": "1935",
      "DOI": "10.1063/1.1147000",
      "volume": "67",
      "year": "1996",
      "journal-title": "Rev. Sci. Instrum."
    },
    {
      "key": "2024020316094851800_r11",
      "doi-asserted-by": "crossref",
      "first-page": "4604",
      "DOI": "10.1063/1.325442",
      "volume": "49",
      "year": "1978",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020316094851800_r12",
      "doi-asserted-by": "crossref",
      "first-page": "473",
      "DOI": "10.1080/10584589808208067",
      "volume": "22",
      "year": "1998",
      "journal-title": "Integr. Ferroelectr."
    },
    {
      "key": "2024020316094851800_r13",
      "doi-asserted-by": "crossref",
      "first-page": "1132",
      "DOI": "10.1111/j.1151-2916.1993.tb03730.x",
      "volume": "76",
      "year": "1993",
      "journal-title": "J. Am. Ceram. Soc."
    },
    {
      "key": "2024020316094851800_r14"
    },
    {
      "key": "2024020316094851800_r15"
    },
    {
      "key": "2024020316094851800_r16",
      "doi-asserted-by": "crossref",
      "first-page": "3242",
      "DOI": "10.1557/JMR.1992.3242",
      "volume": "7",
      "year": "1992",
      "journal-title": "J. Mater. Res."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/74/20/3032/18541496/3032_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/74/20/3032/18541496/3032_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T16:09:59Z",
    "timestamp": 1706976599000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/74/20/3032/516724/Properties-of-aluminum-nitride-thin-films-for"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1999,
        5,
        17
      ]
    ]
  },
  "references-count": 16,
  "journal-issue": {
    "issue": "20",
    "published-print": {
      "date-parts": [
        [
          1999,
          5,
          17
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.124055",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1999,
        5,
        17
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1999,
        5,
        17
      ]
    ]
  }
}