Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

We report on the measurements of two-dimensional potential distribution with nanometer spatial resolution of operating light-emitting diodes. By measuring the contact potential difference between an atomic force microscope tip and the cleaved surface of the light emitting diode, we were able to measure the device potential distribution under different applied external bias. It is shown that the junction built-in voltage at the surface decreases with increasing applied forward bias up to flatband conditions, and then inverted. It is found that the potential distribution is governed by self-absorption of the sub-band-gap diode emission.

Bibliography

Shikler, R., Meoded, T., Fried, N., & Rosenwaks, Y. (1999). Potential imaging of operating light-emitting devices using Kelvin force microscopy. Applied Physics Letters, 74(20), 2972–2974.

Authors 4
  1. R. Shikler (first)
  2. T. Meoded (additional)
  3. N. Fried (additional)
  4. Y. Rosenwaks (additional)
References 8 Referenced 80
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:31 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 11:12 a.m.)
Indexed 2 weeks, 1 day ago (Aug. 6, 2025, 8:35 a.m.)
Issued 26 years, 3 months ago (May 17, 1999)
Published 26 years, 3 months ago (May 17, 1999)
Published Print 26 years, 3 months ago (May 17, 1999)
Funders 0

None

@article{Shikler_1999, title={Potential imaging of operating light-emitting devices using Kelvin force microscopy}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123983}, DOI={10.1063/1.123983}, number={20}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Shikler, R. and Meoded, T. and Fried, N. and Rosenwaks, Y.}, year={1999}, month=may, pages={2972–2974} }