DOI: 10.1063/1.123889. Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition

Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition

10.1063/1.123889

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Thin films of Li-doped ZnO of different compositions (Zn1−xLix)O, x=0.1, 0.17, and 0.3 have been prepared on Si(100) substrates, with no buffer layer, by the pulsed laser deposition method. Ferroelectric behavior with a memory window of 1.2 V has been observed in capacitance–voltage measurements. The peak maximum in the capacitance–temperature curve suggests that the ferroelectric phase transition occurs around 340 K.

Bibliography

Joseph, M., Tabata, H., & Kawai, T. (1999). Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition. Applied Physics Letters, 74(17), 2534â2536.

Authors 3

M. Joseph (first)
H. Tabata (additional)
T. Kawai (additional)

References 20 Referenced 205

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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:04 a.m.)
Indexed	4 months, 3 weeks ago (April 1, 2025, 1:01 p.m.)
Issued	26 years, 3 months ago (April 26, 1999)
Published	26 years, 3 months ago (April 26, 1999)
Published Print	26 years, 3 months ago (April 26, 1999)

Funders 0

None

BibTeX

@article{Joseph_1999, title={Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123889}, DOI={10.1063/1.123889}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Joseph, M. and Tabata, H. and Kawai, T.}, year={1999}, month=apr, pages={2534–2536} }

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