DOI: 10.1063/1.123872. Boron-enhanced diffusion of boron from ultralow-energy ion implantation

Boron-enhanced diffusion of boron from ultralow-energy ion implantation

10.1063/1.123872

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 °C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3×1014 and 1×1015 cm−2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers.

Bibliography

Agarwal, A., Gossmann, H.-J., Eaglesham, D. J., Herner, S. B., Fiory, A. T., & Haynes, T. E. (1999). Boron-enhanced diffusion of boron from ultralow-energy ion implantation. Applied Physics Letters, 74(17), 2435â2437.

Authors 6

Aditya Agarwal (first)
H.-J. Gossmann (additional)
D. J. Eaglesham (additional)
S. B. Herner (additional)
A. T. Fiory (additional)
T. E. Haynes (additional)

References 14 Referenced 65

{'key': '2024020316023346800_r1'}
10.1063/1.120552 / Appl. Phys. Lett. (1997)
{'key': '2024020316023346800_r3'}
10.1149/1.2133492 / J. Electrochem. Soc. (1977)
10.1063/1.353441 / J. Appl. Phys. (1993)
10.1063/1.120527 / Appl. Phys. Lett. (1997)
10.1016/0029-554X(80)90440-1 / Nucl. Instrum. Methods (1980)
{'key': '2024020316023346800_r8'}
10.1016/S1369-8001(98)00008-0 / Mater. Sci Semicond. Proc. (1998)
{'key': '2024020316023346800_r10'}
{'key': '2024020316023346800_r11'}
10.1103/RevModPhys.61.289 / Rev. Mod. Phys. (1989)
10.1063/1.360594 / J. Appl. Phys. (1995)
10.1063/1.123841 / Appl. Phys. Lett. (1999)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:02 a.m.)
Indexed	2 months ago (June 25, 2025, 1:49 a.m.)
Issued	26 years, 4 months ago (April 26, 1999)
Published	26 years, 4 months ago (April 26, 1999)
Published Print	26 years, 4 months ago (April 26, 1999)

Funders 0

None

BibTeX

@article{Agarwal_1999, title={Boron-enhanced diffusion of boron from ultralow-energy ion implantation}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123872}, DOI={10.1063/1.123872}, number={17}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Agarwal, Aditya and Gossmann, H.-J. and Eaglesham, D. J. and Herner, S. B. and Fiory, A. T. and Haynes, T. E.}, year={1999}, month=apr, pages={2435–2437} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2025,
        6,
        25
      ]
    ],
    "date-time": "2025-06-25T05:49:28Z",
    "timestamp": 1750830568913
  },
  "reference-count": 14,
  "publisher": "AIP Publishing",
  "issue": "17",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1999,
        4,
        26
      ]
    ]
  },
  "abstract": "<jats:p>We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050\u200a\u00b0C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3\u00d71014 and 1\u00d71015\u2008cm\u22122. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers.</jats:p>",
  "DOI": "10.1063/1.123872",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:31:28Z",
    "timestamp": 1027690288000
  },
  "page": "2435-2437",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 65,
  "title": "Boron-enhanced diffusion of boron from ultralow-energy ion implantation",
  "prefix": "10.1063",
  "volume": "74",
  "author": [
    {
      "given": "Aditya",
      "family": "Agarwal",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "H.-J.",
      "family": "Gossmann",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "D. J.",
      "family": "Eaglesham",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "S. B.",
      "family": "Herner",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "A. T.",
      "family": "Fiory",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "T. E.",
      "family": "Haynes",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee\u200937831"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020316023346800_r1"
    },
    {
      "key": "2024020316023346800_r2",
      "doi-asserted-by": "crossref",
      "first-page": "3141",
      "DOI": "10.1063/1.120552",
      "volume": "71",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020316023346800_r3"
    },
    {
      "key": "2024020316023346800_r4",
      "doi-asserted-by": "crossref",
      "first-page": "1107",
      "DOI": "10.1149/1.2133492",
      "volume": "124",
      "year": "1977",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020316023346800_r5",
      "doi-asserted-by": "crossref",
      "first-page": "8237",
      "DOI": "10.1063/1.353441",
      "volume": "73",
      "year": "1993",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020316023346800_r6",
      "doi-asserted-by": "crossref",
      "first-page": "3862",
      "DOI": "10.1063/1.120527",
      "volume": "71",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020316023346800_r7",
      "doi-asserted-by": "crossref",
      "first-page": "257",
      "DOI": "10.1016/0029-554X(80)90440-1",
      "volume": "174",
      "year": "1980",
      "journal-title": "Nucl. Instrum. Methods"
    },
    {
      "key": "2024020316023346800_r8"
    },
    {
      "key": "2024020316023346800_r9",
      "doi-asserted-by": "crossref",
      "first-page": "17",
      "DOI": "10.1016/S1369-8001(98)00008-0",
      "volume": "1",
      "year": "1998",
      "journal-title": "Mater. Sci Semicond. Proc."
    },
    {
      "key": "2024020316023346800_r10"
    },
    {
      "key": "2024020316023346800_r11"
    },
    {
      "key": "2024020316023346800_r12",
      "doi-asserted-by": "crossref",
      "first-page": "289",
      "DOI": "10.1103/RevModPhys.61.289",
      "volume": "61",
      "year": "1989",
      "journal-title": "Rev. Mod. Phys."
    },
    {
      "key": "2024020316023346800_r13",
      "doi-asserted-by": "crossref",
      "first-page": "5926",
      "DOI": "10.1063/1.360594",
      "volume": "78",
      "year": "1995",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020316023346800_r14",
      "doi-asserted-by": "crossref",
      "first-page": "2331",
      "DOI": "10.1063/1.123841",
      "volume": "74",
      "year": "1999",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/74/17/2435/18541014/2435_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/74/17/2435/18541014/2435_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T16:02:44Z",
    "timestamp": 1706976164000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/74/17/2435/70449/Boron-enhanced-diffusion-of-boron-from-ultralow"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1999,
        4,
        26
      ]
    ]
  },
  "references-count": 14,
  "journal-issue": {
    "issue": "17",
    "published-print": {
      "date-parts": [
        [
          1999,
          4,
          26
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.123872",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1999,
        4,
        26
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1999,
        4,
        26
      ]
    ]
  }
}