DOI: 10.1063/1.123853. Direct observation of localized high current densities in GaN films

Direct observation of localized high current densities in GaN films

10.1063/1.123853

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Local high current densities in areas around dislocations with a screw component might be responsible for the observed high leakage currents in GaN-based electronic devices. Using ballistic electron emission microscopy, threading dislocations with a screw component are found to be accompanied by high current densities and low effective Schottky barrier heights. The electronic states responsible for this extremely nonuniform behavior of GaN films are metastable trap states. The experimental results show that acceptor- and donor-like charge traps coexist in the vicinity of dislocations with a screw component.

Bibliography

Brazel, E. G., Chin, M. A., & Narayanamurti, V. (1999). Direct observation of localized high current densities in GaN films. Applied Physics Letters, 74(16), 2367â2369.

Authors 3

E. G. Brazel (first)
M. A. Chin (additional)
V. Narayanamurti (additional)

References 18 Referenced 130

{'key': '2024020316013453800_r1'}
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10.1103/PhysRevLett.79.3672 / Phys. Rev. Lett. (1997)
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{'key': '2024020316013453800_r8', 'first-page': '19', 'volume': '1', 'year': '1997', 'journal-title': 'MRS Internet J. Nitride Semicond. Res.'} / MRS Internet J. Nitride Semicond. Res. (1997)
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{'key': '2024020316013453800_r14'}
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11:01 a.m.)
Indexed	4 months ago (April 21, 2025, 12:43 a.m.)
Issued	26 years, 4 months ago (April 19, 1999)
Published	26 years, 4 months ago (April 19, 1999)
Published Print	26 years, 4 months ago (April 19, 1999)

Funders 0

None

BibTeX

@article{Brazel_1999, title={Direct observation of localized high current densities in GaN films}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123853}, DOI={10.1063/1.123853}, number={16}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Brazel, E. G. and Chin, M. A. and Narayanamurti, V.}, year={1999}, month=apr, pages={2367–2369} }

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