DOI: 10.1063/1.123742. Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion

10.1063/1.123742

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atomistic simulations are used to study the effects of implant parameters on transient enhanced diffusion (TED). We analyze 10 keV Si implants in a wide range of doses from 108 to 1014 ions/cm2, dose rates from 1010 to 1014 ions/cm2 s, and implant temperature from room temperature to 1000 °C. Different regimes with different dependence of TED on these parameters are observed. For high doses, high dose rates, and low implant temperatures, the Frenkel pairs are accumulated during ion implantation, and the resulting damage is very dense. During the postimplant annealing, the recombination of Frenkel pairs is efficient, and the extra interstitials generated by the implanted ions provide the main contribution to the enhanced diffusivity. For low doses, low dose rates, and high implant temperatures, there is little interaction between neighboring cascades during annealing. The recombination of Frenkel pairs is not complete, and many interstitials and vacancies from each cascade survive recombination and contribute significantly to TED.

Bibliography

Pelaz, L., Gilmer, G. H., Venezia, V. C., Gossmann, H.-J., Jaraiz, M., & Barbolla, J. (1999). Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion. Applied Physics Letters, 74(14), 2017â2019.

Authors 6

Lourdes Pelaz (first)
G. H. Gilmer (additional)
V. C. Venezia (additional)
H.-J. Gossmann (additional)
M. Jaraiz (additional)
J. Barbolla (additional)

References 13 Referenced 43

10.1149/1.2085734 / J. Electrochem. Soc. (1991)
10.1063/1.112725 / Appl. Phys. Lett. (1994)
10.1557/PROC-469-253 / Mater. Res. Soc. Symp. Proc. (1997)
10.1007/s11664-997-0085-9 / J. Electron. Mater. (1997)
10.1063/1.116701 / Appl. Phys. Lett. (1996)
10.1063/1.121963 / Appl. Phys. Lett. (1998)
10.1063/1.103100 / Appl. Phys. Lett. (1990)
10.1063/1.325193 / J. Appl. Phys. (1978)
{'key': '2024020315595490000_r9'}
10.1103/PhysRevB.9.5008 / Phys. Rev. B (1974)
10.1557/PROC-532-43 / Mater. Res. Soc. Symp. Proc. (1998)
10.1063/1.118839 / Appl. Phys. Lett. (1997)
10.1063/1.120552 / Appl. Phys. Lett. (1997)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 11 a.m.)
Indexed	1 year, 6 months ago (Feb. 10, 2024, 4:43 p.m.)
Issued	26 years, 4 months ago (April 5, 1999)
Published	26 years, 4 months ago (April 5, 1999)
Published Print	26 years, 4 months ago (April 5, 1999)

Funders 0

None

BibTeX

@article{Pelaz_1999, title={Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123742}, DOI={10.1063/1.123742}, number={14}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Pelaz, Lourdes and Gilmer, G. H. and Venezia, V. C. and Gossmann, H.-J. and Jaraiz, M. and Barbolla, J.}, year={1999}, month=apr, pages={2017–2019} }

JSON

{
  "indexed": {
    "date-parts": [
      [
        2024,
        2,
        10
      ]
    ],
    "date-time": "2024-02-10T21:43:00Z",
    "timestamp": 1707601380434
  },
  "reference-count": 13,
  "publisher": "AIP Publishing",
  "issue": "14",
  "content-domain": {
    "domain": [
      "pubs.aip.org"
    ],
    "crossmark-restriction": true
  },
  "published-print": {
    "date-parts": [
      [
        1999,
        4,
        5
      ]
    ]
  },
  "abstract": "<jats:p>Atomistic simulations are used to study the effects of implant parameters on transient enhanced diffusion (TED). We analyze 10 keV Si implants in a wide range of doses from 108 to 1014\u200aions/cm2, dose rates from 1010 to 1014\u200aions/cm2\u200as, and implant temperature from room temperature to 1000\u200a\u00b0C. Different regimes with different dependence of TED on these parameters are observed. For high doses, high dose rates, and low implant temperatures, the Frenkel pairs are accumulated during ion implantation, and the resulting damage is very dense. During the postimplant annealing, the recombination of Frenkel pairs is efficient, and the extra interstitials generated by the implanted ions provide the main contribution to the enhanced diffusivity. For low doses, low dose rates, and high implant temperatures, there is little interaction between neighboring cascades during annealing. The recombination of Frenkel pairs is not complete, and many interstitials and vacancies from each cascade survive recombination and contribute significantly to TED.</jats:p>",
  "DOI": "10.1063/1.123742",
  "type": "journal-article",
  "created": {
    "date-parts": [
      [
        2002,
        7,
        26
      ]
    ],
    "date-time": "2002-07-26T13:36:08Z",
    "timestamp": 1027690568000
  },
  "page": "2017-2019",
  "update-policy": "http://dx.doi.org/10.1063/aip-crossmark-policy-page",
  "source": "Crossref",
  "is-referenced-by-count": 43,
  "title": "Modeling of the effects of dose, dose rate, and implant temperature on transient enhanced diffusion",
  "prefix": "10.1063",
  "volume": "74",
  "author": [
    {
      "given": "Lourdes",
      "family": "Pelaz",
      "sequence": "first",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "G. H.",
      "family": "Gilmer",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "V. C.",
      "family": "Venezia",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "H.-J.",
      "family": "Gossmann",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Bell Laboratories, Lucent Technologies, 700 Mountain Avenue, Murray Hill, New Jersey\u200907974"
        }
      ]
    },
    {
      "given": "M.",
      "family": "Jaraiz",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universidad de Valladolid, Campus Miguel Delibes s/n, 47011\u2009Valladolid, Spain"
        }
      ]
    },
    {
      "given": "J.",
      "family": "Barbolla",
      "sequence": "additional",
      "affiliation": [
        {
          "name": "Universidad de Valladolid, Campus Miguel Delibes s/n, 47011\u2009Valladolid, Spain"
        }
      ]
    }
  ],
  "member": "317",
  "reference": [
    {
      "key": "2024020315595490000_r1",
      "doi-asserted-by": "crossref",
      "first-page": "1160",
      "DOI": "10.1149/1.2085734",
      "volume": "138",
      "year": "1991",
      "journal-title": "J. Electrochem. Soc."
    },
    {
      "key": "2024020315595490000_r2",
      "doi-asserted-by": "crossref",
      "first-page": "2305",
      "DOI": "10.1063/1.112725",
      "volume": "65",
      "year": "1994",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315595490000_r3",
      "doi-asserted-by": "crossref",
      "first-page": "253",
      "DOI": "10.1557/PROC-469-253",
      "volume": "469",
      "year": "1997",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020315595490000_r4",
      "doi-asserted-by": "crossref",
      "first-page": "1361",
      "DOI": "10.1007/s11664-997-0085-9",
      "volume": "26",
      "year": "1997",
      "journal-title": "J. Electron. Mater."
    },
    {
      "key": "2024020315595490000_r5",
      "doi-asserted-by": "crossref",
      "first-page": "409",
      "DOI": "10.1063/1.116701",
      "volume": "68",
      "year": "1996",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315595490000_r6",
      "doi-asserted-by": "crossref",
      "first-page": "1421",
      "DOI": "10.1063/1.121963",
      "volume": "73",
      "year": "1998",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315595490000_r7",
      "doi-asserted-by": "crossref",
      "first-page": "1787",
      "DOI": "10.1063/1.103100",
      "volume": "56",
      "year": "1990",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315595490000_r8",
      "doi-asserted-by": "crossref",
      "first-page": "2717",
      "DOI": "10.1063/1.325193",
      "volume": "49",
      "year": "1978",
      "journal-title": "J. Appl. Phys."
    },
    {
      "key": "2024020315595490000_r9"
    },
    {
      "key": "2024020315595490000_r10",
      "doi-asserted-by": "crossref",
      "first-page": "5008",
      "DOI": "10.1103/PhysRevB.9.5008",
      "volume": "9",
      "year": "1974",
      "journal-title": "Phys. Rev. B"
    },
    {
      "key": "2024020315595490000_r11",
      "doi-asserted-by": "crossref",
      "first-page": "43",
      "DOI": "10.1557/PROC-532-43",
      "volume": "532",
      "year": "1998",
      "journal-title": "Mater. Res. Soc. Symp. Proc."
    },
    {
      "key": "2024020315595490000_r12",
      "doi-asserted-by": "crossref",
      "first-page": "2285",
      "DOI": "10.1063/1.118839",
      "volume": "70",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    },
    {
      "key": "2024020315595490000_r13",
      "doi-asserted-by": "crossref",
      "first-page": "3141",
      "DOI": "10.1063/1.120552",
      "volume": "71",
      "year": "1997",
      "journal-title": "Appl. Phys. Lett."
    }
  ],
  "container-title": "Applied Physics Letters",
  "original-title": [],
  "language": "en",
  "link": [
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/74/14/2017/18540834/2017_1_online.pdf",
      "content-type": "application/pdf",
      "content-version": "vor",
      "intended-application": "syndication"
    },
    {
      "URL": "https://pubs.aip.org/aip/apl/article-pdf/74/14/2017/18540834/2017_1_online.pdf",
      "content-type": "unspecified",
      "content-version": "vor",
      "intended-application": "similarity-checking"
    }
  ],
  "deposited": {
    "date-parts": [
      [
        2024,
        2,
        3
      ]
    ],
    "date-time": "2024-02-03T16:00:08Z",
    "timestamp": 1706976008000
  },
  "score": 1,
  "resource": {
    "primary": {
      "URL": "https://pubs.aip.org/apl/article/74/14/2017/73828/Modeling-of-the-effects-of-dose-dose-rate-and"
    }
  },
  "subtitle": [],
  "short-title": [],
  "issued": {
    "date-parts": [
      [
        1999,
        4,
        5
      ]
    ]
  },
  "references-count": 13,
  "journal-issue": {
    "issue": "14",
    "published-print": {
      "date-parts": [
        [
          1999,
          4,
          5
        ]
      ]
    }
  },
  "URL": "http://dx.doi.org/10.1063/1.123742",
  "relation": {},
  "ISSN": [
    "0003-6951",
    "1077-3118"
  ],
  "subject": [],
  "published-other": {
    "date-parts": [
      [
        1999,
        4,
        5
      ]
    ]
  },
  "published": {
    "date-parts": [
      [
        1999,
        4,
        5
      ]
    ]
  }
}