Abstract
The non-Arrhenius temperature dependence observed in the charge-to-breakdown data in thin oxides is related to the temperature dependence of the defect buildup in the same films. For each temperature, this defect buildup is studied as a function of the defect generation probability and the total number of defects at breakdown. Each of these quantities is shown to have its own unique temperature dependence, which when combined gives the results observed for the charge-to-breakdown data. As the oxide layers are made thinner, the temperature dependence of the defect generation probability dominates these observations.
References
10
Referenced
102
{'key': '2024020315540729700_r1'}
10.1063/1.120299
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Dates
Type | When |
---|---|
Created | 23 years, 1 month ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:54 a.m.) |
Indexed | 4 months, 2 weeks ago (April 16, 2025, 2:12 a.m.) |
Issued | 26 years, 5 months ago (March 22, 1999) |
Published | 26 years, 5 months ago (March 22, 1999) |
Published Print | 26 years, 5 months ago (March 22, 1999) |
@article{DiMaria_1999, title={Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123677}, DOI={10.1063/1.123677}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={DiMaria, D. J. and Stathis, J. H.}, year={1999}, month=mar, pages={1752–1754} }