Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The non-Arrhenius temperature dependence observed in the charge-to-breakdown data in thin oxides is related to the temperature dependence of the defect buildup in the same films. For each temperature, this defect buildup is studied as a function of the defect generation probability and the total number of defects at breakdown. Each of these quantities is shown to have its own unique temperature dependence, which when combined gives the results observed for the charge-to-breakdown data. As the oxide layers are made thinner, the temperature dependence of the defect generation probability dominates these observations.

Bibliography

DiMaria, D. J., & Stathis, J. H. (1999). Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films. Applied Physics Letters, 74(12), 1752–1754.

Authors 2
  1. D. J. DiMaria (first)
  2. J. H. Stathis (additional)
References 10 Referenced 102
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Dates
Type When
Created 23 years, 1 month ago (July 26, 2002, 9:31 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 10:54 a.m.)
Indexed 4 months, 2 weeks ago (April 16, 2025, 2:12 a.m.)
Issued 26 years, 5 months ago (March 22, 1999)
Published 26 years, 5 months ago (March 22, 1999)
Published Print 26 years, 5 months ago (March 22, 1999)
Funders 0

None

@article{DiMaria_1999, title={Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123677}, DOI={10.1063/1.123677}, number={12}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={DiMaria, D. J. and Stathis, J. H.}, year={1999}, month=mar, pages={1752–1754} }