Crossref journal-article
AIP Publishing
Applied Physics Letters (317)
Abstract

The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28–0.4 and not close to 1 because S is controlled by Ti–O-type bonds not Sr–O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si.

Bibliography

Robertson, J., & Chen, C. W. (1999). Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate. Applied Physics Letters, 74(8), 1168–1170.

Authors 2
  1. J. Robertson (first)
  2. C. W. Chen (additional)
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Dates
Type When
Created 23 years ago (July 26, 2002, 9:36 a.m.)
Deposited 1 year, 6 months ago (Feb. 3, 2024, 10:45 a.m.)
Indexed 4 weeks ago (July 27, 2025, 3:53 a.m.)
Issued 26 years, 6 months ago (Feb. 22, 1999)
Published 26 years, 6 months ago (Feb. 22, 1999)
Published Print 26 years, 6 months ago (Feb. 22, 1999)
Funders 0

None

@article{Robertson_1999, title={Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123476}, DOI={10.1063/1.123476}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Robertson, J. and Chen, C. W.}, year={1999}, month=feb, pages={1168–1170} }