Abstract
The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28–0.4 and not close to 1 because S is controlled by Ti–O-type bonds not Sr–O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:36 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:45 a.m.) |
Indexed | 4 weeks ago (July 27, 2025, 3:53 a.m.) |
Issued | 26 years, 6 months ago (Feb. 22, 1999) |
Published | 26 years, 6 months ago (Feb. 22, 1999) |
Published Print | 26 years, 6 months ago (Feb. 22, 1999) |
@article{Robertson_1999, title={Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123476}, DOI={10.1063/1.123476}, number={8}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Robertson, J. and Chen, C. W.}, year={1999}, month=feb, pages={1168–1170} }