DOI: 10.1063/1.123402. Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

10.1063/1.123402

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Atomic force microscopy with a conductive probe has been used to study both the topography and the electronic properties of 10-nm-scale self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy on n-type GaAs. The current flowing through the conductive probe normal to the sample surface is measured for imaging local conductance, while the deflection of cantilever is optically detected for disclosing geometrical structure. The conductance on InAs QDs is found to be much larger than that on the wetting layer, allowing imaging of QDs through measurements of local current. We attribute this change in conductance to the local modification of surface band bending associated with surface states on InAs QD surface. Mechanisms of electron transport through QDs are discussed based on current–voltage characteristics measured on QDs of various sizes.

Bibliography

Tanaka, I., Kamiya, I., Sakaki, H., Qureshi, N., Allen, S. J., & Petroff, P. M. (1999). Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip. Applied Physics Letters, 74(6), 844â846.

Authors 6

Ichiro Tanaka (first)
I. Kamiya (additional)
H. Sakaki (additional)
N. Qureshi (additional)
S. J. Allen (additional)
P. M. Petroff (additional)

References 17 Referenced 92

10.1016/0039-6028(92)91212-T / Surf. Sci. (1992)
10.1016/0038-1098(94)90865-6 / Solid State Commun. (1994)
10.1063/1.110199 / Appl. Phys. Lett. (1993)
{'key': '2024020315410612500_r3'}
10.1103/PhysRevLett.73.716 / Phys. Rev. Lett. (1994)
10.1063/1.112060 / Appl. Phys. Lett. (1994)
10.1063/1.116716 / Appl. Phys. Lett. (1996)
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{'key': '2024020315410612500_r14', 'first-page': '336', 'volume': '21', 'year': '1996', 'journal-title': 'J. Phys. Soc. Jpn. Suppl.'} / J. Phys. Soc. Jpn. Suppl. (1996)
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Dates

Type	When
Created	23 years ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:41 a.m.)
Indexed	2 months ago (June 23, 2025, 4:25 a.m.)
Issued	26 years, 6 months ago (Feb. 8, 1999)
Published	26 years, 6 months ago (Feb. 8, 1999)
Published Print	26 years, 6 months ago (Feb. 8, 1999)

Funders 0

None

BibTeX

@article{Tanaka_1999, title={Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123402}, DOI={10.1063/1.123402}, number={6}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Tanaka, Ichiro and Kamiya, I. and Sakaki, H. and Qureshi, N. and Allen, S. J. and Petroff, P. M.}, year={1999}, month=feb, pages={844–846} }

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