DOI: 10.1063/1.123303. High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN

10.1063/1.123303

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

We present the fabrication and characterization of nonintentionally doped GaN and GaN:Mg Schottky metal–semiconductor–metal (MSM) photodetectors, grown on sapphire by metalorganic chemical vapor deposition. Low-leakage, Schottky contacts were made with Pt/Au. The devices are visible blind, with an ultraviolet/green contrast of about five orders of magnitude. The response times of the MSM devices were &lt;10 ns and about 200 ns for GaN and GaN:Mg, respectively. The noise power spectral density remains below the background level of the system (10−24 A2/Hz) up to 5 V, for the undoped GaN MSM detector.

Bibliography

Walker, D., Monroy, E., Kung, P., Wu, J., Hamilton, M., Sanchez, F. J., Diaz, J., & Razeghi, M. (1999). High-speed, low-noise metalâsemiconductorâmetal ultraviolet photodetectors based on GaN. Applied Physics Letters, 74(5), 762â764.

Authors 8

D. Walker (first)
E. Monroy (additional)
P. Kung (additional)
J. Wu (additional)
M. Hamilton (additional)
F. J. Sanchez (additional)
J. Diaz (additional)
M. Razeghi (additional)

References 11 Referenced 163

10.1063/1.362677 / J. Appl. Phys. (1996)
10.1063/1.118450 / Appl. Phys. Lett. (1997)
10.1063/1.119673 / Appl. Phys. Lett. (1997)
10.1063/1.115385 / Appl. Phys. Lett. (1995)
10.1007/s11664-997-0173-x / J. Electron. Mater. (1997)
10.1063/1.121631 / Appl. Phys. Lett. (1998)
10.1063/1.118837 / Appl. Phys. Lett. (1997)
10.1063/1.122405 / Appl. Phys. Lett. (1998)
10.1063/1.367484 / J. Appl. Phys. (1998)
10.1063/1.115036 / Appl. Phys. Lett. (1995)
{'key': '2024020315391575200_r11'}

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 9:36 a.m.)
Deposited	1 year, 6 months ago (Feb. 3, 2024, 10:39 a.m.)
Indexed	4 weeks, 2 days ago (July 27, 2025, 3:13 a.m.)
Issued	26 years, 6 months ago (Feb. 1, 1999)
Published	26 years, 6 months ago (Feb. 1, 1999)
Published Print	26 years, 6 months ago (Feb. 1, 1999)

Funders 0

None

BibTeX

@article{Walker_1999, title={High-speed, low-noise metal–semiconductor–metal ultraviolet photodetectors based on GaN}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123303}, DOI={10.1063/1.123303}, number={5}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Walker, D. and Monroy, E. and Kung, P. and Wu, J. and Hamilton, M. and Sanchez, F. J. and Diaz, J. and Razeghi, M.}, year={1999}, month=feb, pages={762–764} }

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