Abstract
A simple model is proposed for charge carrier transport across grain boundaries with an acceptor-like trap level. Potential wells between the grains are formed due to negatively charged grain boundaries. Based on this model, a variety of temperature dependencies of the charge carrier mobility can be described. Using realistic parameters, this model reproduces very well the measured temperature dependencies of the field-effect mobility in polycrystalline pentacene and oligothiophene thin film devices. Therefore, it seems to be difficult to investigate the intrinsic material properties of organic semiconductors using only polycrystalline field-effect devices, since they may be masked by the effects of traps and grain boundaries.
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:31 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 7, 2024, 8:20 p.m.) |
Issued | 26 years, 7 months ago (Jan. 11, 1999) |
Published | 26 years, 7 months ago (Jan. 11, 1999) |
Published Print | 26 years, 7 months ago (Jan. 11, 1999) |
@article{Sch_n_1999, title={Modeling of the temperature dependence of the field-effect mobility in thin film devices of conjugated oligomers}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123274}, DOI={10.1063/1.123274}, number={2}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Schön, J. H. and Batlogg, B.}, year={1999}, month=jan, pages={260–262} }