DOI: 10.1063/1.123197. High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy

High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy

10.1063/1.123197

Crossref journal-article

AIP Publishing

Applied Physics Letters (317)

Abstract

Highly-reflective GaN/GaAlN quarter-wave Bragg mirrors, designed to be centered at blue/green wavelengths, have been grown by molecular beam epitaxy. The reflectivity for a mirror centered at 473 nm was as high as 93% and the bandwidth reached 22 nm. Detailed x-ray diffraction measurements allowed us to characterize the structural parameters of the Bragg mirrors. We show that, in spite of substantial strain relaxation occurring in our samples, high reflectivity is still possible. In addition, we show that growth interruption at the heterointerfaces is crucial for achieving high reflectivities.

Bibliography

Langer, R., Barski, A., Simon, J., Pelekanos, N. T., Konovalov, O., AndrÃ©, R., & Dang, L. S. (1999). High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy. Applied Physics Letters, 74(24), 3610â3612.

Authors 7

R. Langer (first)
A. Barski (additional)
J. Simon (additional)
N. T. Pelekanos (additional)
O. Konovalov (additional)
R. André (additional)
Le Si Dang (additional)

References 12 Referenced 66

10.1063/1.105284 / Appl. Phys. Lett. (1991)
{'key': '2024020316224087300_r2', 'first-page': '79', 'volume': '449', 'year': '1997', 'journal-title': 'Mater. Res. Soc. Symp. Proc.'} / Mater. Res. Soc. Symp. Proc. (1997)
10.1557/S1092578300001484 / MRS Internet J. Nitride Semicond. Res. (1997)
10.1063/1.123447 / Appl. Phys. Lett. (1999)
{'key': '2024020316224087300_r5'}
10.1063/1.366309 / J. Appl. Phys. (1997)
{'key': '2024020316224087300_r7', 'first-page': '3599', 'volume': '38', 'year': '1998', 'journal-title': 'Phys. Rev. B'} / Phys. Rev. B (1998)
{'key': '2024020316224087300_r8'}
10.1103/PhysRevB.54.17745 / Phys. Rev. B (1996)
{'key': '2024020316224087300_r10', 'first-page': '1239', 'volume': '26', 'year': '1989', 'journal-title': 'J. Phys. Soc. Jpn.'} / J. Phys. Soc. Jpn. (1989)
{'key': '2024020316224087300_r10a', 'first-page': '469', 'volume': '87', 'year': '1964', 'journal-title': 'Bull. Soc. Fr. Mineral. Cristallogr.'} / Bull. Soc. Fr. Mineral. Cristallogr. (1964)
10.1063/1.368223 / J. Appl. Phys. (1998)

Dates

Type	When
Created	23 years, 1 month ago (July 26, 2002, 8:58 a.m.)
Deposited	1 year, 7 months ago (Feb. 3, 2024, 11:22 a.m.)
Indexed	4 months, 3 weeks ago (April 13, 2025, 12:53 a.m.)
Issued	26 years, 2 months ago (June 14, 1999)
Published	26 years, 2 months ago (June 14, 1999)
Published Print	26 years, 2 months ago (June 14, 1999)

Funders 0

None

BibTeX

@article{Langer_1999, title={High-reflectivity GaN/GaAlN Bragg mirrors at blue/green wavelengths grown by molecular beam epitaxy}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123197}, DOI={10.1063/1.123197}, number={24}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Langer, R. and Barski, A. and Simon, J. and Pelekanos, N. T. and Konovalov, O. and André, R. and Dang, Le Si}, year={1999}, month=jun, pages={3610–3612} }

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