Abstract
We have developed a femtosecond-resolved near-field scanning optical microscope, using a diffraction-limited pump and near-field probe configuration, which allows us to measure carrier dynamics with a spatial resolution of ∼150 nm and a time resolution of ∼250 fs. This instrument is used for near-field degenerate pump–probe studies of carrier dynamics in GaAs/AlGaAs single quantum well samples locally patterned by focused-ion-beam (FIB) implantation. We find that lateral carrier diffusion across the nanometer-scale FIB pattern plays a significant role in the decay of the excited carriers.
References
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Dates
Type | When |
---|---|
Created | 23 years ago (July 26, 2002, 9:31 a.m.) |
Deposited | 1 year, 6 months ago (Feb. 3, 2024, 10:30 a.m.) |
Indexed | 1 year, 6 months ago (Feb. 19, 2024, 2:04 p.m.) |
Issued | 26 years, 7 months ago (Jan. 4, 1999) |
Published | 26 years, 7 months ago (Jan. 4, 1999) |
Published Print | 26 years, 7 months ago (Jan. 4, 1999) |
@article{Nechay_1999, title={Femtosecond near-field optical spectroscopy of implantation patterned semiconductors}, volume={74}, ISSN={1077-3118}, url={http://dx.doi.org/10.1063/1.123133}, DOI={10.1063/1.123133}, number={1}, journal={Applied Physics Letters}, publisher={AIP Publishing}, author={Nechay, B. A. and Siegner, U. and Morier-Genoud, F. and Schertel, A. and Keller, U.}, year={1999}, month=jan, pages={61–63} }